STGW80H65DFB Infineon IGBT Module, High Power Switching, Standard Package

  • This device enables efficient power switching, improving energy management in electronic circuits.
  • STGW80H65DFB supports high voltage operation, ensuring stable performance under demanding electrical conditions.
  • The compact package type offers board space savings, facilitating integration into densely packed designs.
  • Ideal for motor drive applications, it enhances control accuracy and system responsiveness.
  • Built to meet rigorous quality standards, it provides dependable operation over extended use.
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STGW80H65DFB Overview

The STGW80H65DFB is a high-performance IGBT module designed for industrial power electronics applications requiring reliable switching and efficient power management. Featuring a robust dual IGBT topology with integrated freewheeling diodes, it supports up to 650 V blocking voltage and 80 A continuous current, making it suitable for demanding inverter and converter systems. This module offers low conduction and switching losses, enhancing overall system efficiency while ensuring strong thermal performance. Its compact and rugged design simplifies integration into various power electronic assemblies. For detailed product support and additional resources, visit IC Manufacturer.

STGW80H65DFB Technical Specifications

ParameterSpecification
Collector-Emitter Voltage (Vces)650 V
Continuous Collector Current (Ic)80 A
Gate-Emitter Threshold Voltage (Vge(th))4 V (typical)
Maximum Gate-Emitter Voltage (Vge)??20 V
Collector-Emitter Saturation Voltage (Vce(sat))1.65 V (typical at Ic=40 A)
Turn-On Delay Time (td(on))60 ns (typical)
Turn-Off Delay Time (td(off))100 ns (typical)
Operating Junction Temperature (Tj)-40??C to 150??C
Module PackageDual IGBT, isolated baseplate

STGW80H65DFB Key Features

  • High blocking voltage: Supports up to 650 V, enabling operation in medium-voltage industrial applications with robust voltage tolerance.
  • Significant continuous current capacity: 80 A rating ensures reliable power delivery for demanding inverter and motor drive systems.
  • Low switching losses: Optimized gate charge and fast switching characteristics improve efficiency and reduce thermal stress.
  • Integrated freewheeling diode: Enhances circuit simplification and reduces external component count, improving system reliability.
  • Wide operating temperature range: Reliable performance from -40??C up to 150??C supports harsh industrial environments.
  • Compact isolated baseplate design: Facilitates ease of mounting and effective heat dissipation in power electronic assemblies.
  • Robust gate voltage tolerance: ??20 V maximum gate-emitter voltage protects against gate drive transients, increasing device durability.

Typical Applications

  • Industrial motor drives requiring efficient and reliable power switching for variable speed control in automation systems.
  • Power inverters in renewable energy systems such as solar and wind, where high switching frequency and thermal stability are critical.
  • Uninterruptible Power Supplies (UPS) benefiting from the device??s low conduction losses and high current handling capability.
  • Traction and transportation electronics demanding rugged IGBT modules for high power density and thermal management.

STGW80H65DFB Advantages vs Typical Alternatives

This IGBT module delivers superior switching performance and enhanced current capacity compared to typical alternatives, reducing power losses and improving energy efficiency. Its integrated freewheeling diode and isolated baseplate design simplify system integration while ensuring robust thermal management. The wide operating temperature range and high gate voltage tolerance further enhance reliability, making it ideal for industrial environments where durability and precision are critical.

STGW80H65DFB Brand Info

The STGW80H65DFB is a product from STMicroelectronics, a global leader in semiconductor technology. Known for innovation in power electronics, STMicroelectronics offers this module as part of its extensive IGBT portfolio designed to support industrial and automotive applications. The product benefits from ST??s expertise in silicon carbide and power semiconductor technology, ensuring high efficiency and reliability in demanding power conversion systems.

FAQ

What is the maximum voltage rating of this IGBT module?

The device has a maximum collector-emitter voltage rating of 650 V, making it suitable for medium-voltage industrial applications such as motor drives and inverters.

Can this module handle continuous high current loads?

Yes, it supports a continuous collector current of 80 A, enabling it to manage heavy-load conditions reliably

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