STGP19NC60HD STMicroelectronics IGBT Transistor – High Voltage, TO-247 Package

  • This device provides efficient power switching, enabling improved control in electronic circuits.
  • It features a high voltage rating, ensuring safe operation in demanding electrical environments.
  • The compact package type allows for board-space savings and easier integration into tight layouts.
  • Ideal for use in power management systems, it helps maintain stable performance under varying loads.
  • Built to meet rigorous testing standards, it offers dependable operation over extended periods.
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STGP19NC60HD Overview

The STGP19NC60HD is a high-performance IGBT transistor designed for industrial power switching applications. Rated for a voltage of 600V and a continuous collector current of 19A, this device offers efficient switching with low conduction losses. Its superior ruggedness and fast switching characteristics make it suitable for demanding environments including motor drives, power supplies, and renewable energy systems. Engineered to deliver reliable operation and thermal stability, this transistor supports optimized power management solutions, making it a preferred choice among engineers and sourcing specialists seeking robust semiconductor components. Available through IC Manufacturer.

STGP19NC60HD Technical Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCES)600V
Continuous Collector Current (IC)19A
Gate-Emitter Voltage (VGES)??20V
Power Dissipation (Ptot)150W
Operating Junction Temperature (TJ)-55 to 150??C
Collector-Emitter Saturation Voltage (VCE(sat))1.6V (typical)
Input Capacitance (Cies)1100pF
Turn-Off Time (toff)80ns
Package TypeTO-247??

STGP19NC60HD Key Features

  • High Voltage Capability: Supports up to 600V, enabling reliable operation in medium-voltage power electronics.
  • Robust Continuous Current: Handles 19A continuous collector current, ensuring suitability for demanding power switching tasks.
  • Low Saturation Voltage: Minimizes conduction losses, improving overall power efficiency and thermal management.
  • Fast Switching Performance: Turn-off time around 80ns allows for higher frequency operation, improving system responsiveness.
  • Wide Operating Temperature Range: Operates reliably from -55??C to 150??C, enhancing durability in harsh environments.
  • Industry-Standard TO-247 Package: Facilitates easy integration and effective heat dissipation in systems.

Typical Applications

  • Industrial motor drives requiring efficient and reliable power switching to control speed and torque in automation systems.
  • Uninterruptible Power Supplies (UPS) where fast switching and high current handling ensure continuous power delivery.
  • Renewable energy converters such as photovoltaic inverters that demand robust high-voltage transistors for energy conversion.
  • Switch-mode power supplies (SMPS) needing low conduction losses and fast switching to improve energy efficiency and reduce heat dissipation.

STGP19NC60HD Advantages vs Typical Alternatives

This IGBT transistor offers a compelling balance of high voltage rating and continuous current capability, providing engineers with enhanced efficiency and low losses compared to typical alternatives. Its fast switching times and robust thermal performance improve system reliability and integration ease. The device??s rugged construction and broad temperature range make it ideal for industrial applications where power density and durability are critical.

STGP19NC60HD Brand Info

The STGP19NC60HD is manufactured by STMicroelectronics, a global leader in semiconductor solutions for power electronics. STMicroelectronics is known for its high-quality IGBT devices that combine advanced silicon technology with proven reliability. This transistor benefits from the company??s extensive expertise in discrete power semiconductors, ensuring optimal performance for industrial and automotive applications. ST??s commitment to innovation and quality support makes this product a trusted choice in power switching devices worldwide.

FAQ

What is the maximum voltage rating of this transistor?

The transistor is rated for a maximum collector-emitter voltage of 600V. This rating ensures it can handle medium-voltage applications safely without breakdown under

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