STGP15H60DF STMicroelectronics IGBT Transistor 15A 600V TO-247 Package

  • This device functions as a power MOSFET, enabling efficient switching and control in electronic circuits.
  • It features a high voltage rating, ensuring safe operation in demanding power applications.
  • The package design offers a compact footprint, contributing to board-space savings in circuit layouts.
  • Ideal for motor control and power management systems, enhancing performance and energy efficiency.
  • Manufactured to meet industry standards, providing reliable operation under typical electrical stresses.
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STGP15H60DF Overview

The STGP15H60DF is a high-voltage insulated-gate bipolar transistor (IGBT) designed for industrial power switching applications. Offering a collector-emitter voltage rating of 600 V and a continuous collector current of 15 A, this device ensures efficient power handling capabilities. Its optimized switching performance and rugged construction make it suitable for use in motor drives, power inverters, and welding machines. The compact TO-247 package supports effective thermal dissipation, contributing to overall device reliability. For more detailed product information, visit IC Manufacturer.

STGP15H60DF Technical Specifications

ParameterValueUnit
Collector-Emitter Voltage (V_CES)600V
Continuous Collector Current (I_C)15A
Gate-Emitter Voltage (V_GE)??20V
Power Dissipation (P_tot)150W
Junction Temperature (T_j)-55 to 150??C
Package TypeTO-247
Turn-Off Time (t_off)230ns
Gate Charge (Q_g)75nC

STGP15H60DF Key Features

  • High voltage blocking capability: Supports up to 600 V, enabling operation in demanding industrial power environments.
  • Robust continuous current rating: 15 A continuous collector current ensures reliable performance under heavy load conditions.
  • Fast switching speed: With a turn-off time of 230 ns, it enhances system efficiency by reducing switching losses.
  • Wide operating temperature range: Functions reliably from -55??C to 150??C, suitable for harsh industrial conditions.
  • TO-247 package: Promotes effective thermal management and simplifies integration into power assemblies.
  • High gate-emitter voltage tolerance: ??20 V rating protects the device from gate voltage overstress during switching.
  • Optimized gate charge: Low gate charge of 75 nC improves switching efficiency and reduces driving power requirements.

Typical Applications

  • Industrial motor drives requiring efficient power switching and robustness under high voltage and current conditions, ensuring smooth speed and torque control.
  • Power inverters for renewable energy systems such as solar and wind, where reliable high-voltage switching is critical for energy conversion efficiency.
  • Welding machines demanding high current capacity and fast switching for precise control of welding arcs and improved quality.
  • Uninterruptible Power Supplies (UPS) where stable and reliable switching helps maintain continuous power during outages or fluctuations.

STGP15H60DF Advantages vs Typical Alternatives

This transistor offers a balanced combination of high voltage and current ratings with fast switching capabilities, making it more efficient than many typical IGBTs in its class. Its low gate charge reduces driving losses, and the robust TO-247 package enhances thermal performance and reliability. These attributes collectively provide improved system efficiency, durability, and ease of integration compared to standard power transistors in industrial environments.

STGP15H60DF Brand Info

The STGP15H60DF is manufactured by STMicroelectronics, a globally recognized leader in semiconductor technology. STMicroelectronics specializes in power devices designed to meet the demanding requirements of industrial, automotive, and consumer applications. This particular IGBT is part of ST??s extensive portfolio of power transistors, known for combining advanced silicon technology with rugged packaging to deliver high performance and reliability. The company supports the product with comprehensive technical documentation and application support, reinforcing its suitability for critical power conversion and control systems.

FAQ

What is the maximum collector-emitter voltage for this IGBT?

The maximum collector-emitter voltage is 600 V, allowing it to handle high-voltage switching tasks commonly found in industrial power electronics.

How much continuous current can the device handle?

The device supports a continuous collector current of 15 A, making it suitable for medium-power industrial applications requiring sustained current flow

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