STGIPQ4C60T-HL Overview
The STGIPQ4C60T-HL is a high-performance 600 V silicon carbide (SiC) power module designed for industrial applications requiring efficient and reliable power switching. Featuring four integrated SiC MOSFETs in a compact package, this device enables enhanced power density and reduced switching losses. Its low thermal resistance and rugged construction support high-temperature operation and improve system reliability. Ideal for power conversion, motor drives, and renewable energy systems, this module delivers superior efficiency and robustness. Available from IC Manufacturer, it offers engineers a cutting-edge solution for next-generation power electronics.
STGIPQ4C60T-HL Technical Specifications
| Parameter | Value |
|---|---|
| Rated Voltage | 600 V |
| Continuous Drain Current (ID) | 40 A (per MOSFET) |
| Package Type | Power module with isolated baseplate |
| Number of MOSFETs | 4 (Half-bridge configuration) |
| Typical On-Resistance (RDS(on)) | 40 m?? |
| Operating Temperature Range | -40 ??C to +150 ??C |
| Isolation Voltage | 2500 V RMS |
| Thermal Resistance, Junction-to-Case | 0.35 ??C/W |
| Gate Threshold Voltage | 2.5 V (typical) |
| Maximum Gate-to-Source Voltage | ??20 V |
STGIPQ4C60T-HL Key Features
- Integrated Four MOSFETs: Enables compact half-bridge power stage design, reducing PCB space and simplifying assembly.
- High Voltage Rating: Supports 600 V operation, suitable for demanding industrial power conversion circuits.
- Low On-Resistance (RDS(on)): Minimizes conduction losses, improving overall system efficiency and reducing heat generation.
- Wide Temperature Range: Ensures reliable operation under harsh industrial environments from -40 ??C to +150 ??C.
- Isolated Baseplate Package: Enhances electrical isolation and thermal management for safer and more robust designs.
- Fast Switching Capability: Silicon carbide MOSFET technology delivers high-speed switching, enabling higher frequency operation and smaller passive components.
- High Thermal Performance: Low junction-to-case thermal resistance supports effective heat dissipation for improved reliability.
Typical Applications
- Industrial motor drives where efficient half-bridge modules improve power density and responsiveness in variable speed control systems.
- Power factor correction (PFC) circuits benefiting from low switching losses and high voltage capability to enhance energy efficiency.
- Renewable energy inverters converting DC to AC power with high reliability and reduced thermal stress in solar and wind power systems.
- Uninterruptible power supplies (UPS) requiring robust and compact power stages to ensure continuous operation during power disturbances.
STGIPQ4C60T-HL Advantages vs Typical Alternatives
This module excels by combining the superior switching speed and thermal efficiency of silicon carbide MOSFETs with a compact, integrated four-transistor half-bridge design. Compared to traditional silicon IGBTs or discrete MOSFETs, it offers lower conduction and switching losses, leading to higher power density and system reliability. Its wide operating temperature range and isolated baseplate packaging provide enhanced robustness in industrial environments, making it a preferred choice for engineers seeking efficient and durable power modules.
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STGIPQ4C60T-HL Brand Info
The STGIPQ4C60T-HL is a product from STMicroelectronics, a global leader in semiconductor technology and power electronics innovation. STMicroelectronics specializes in silicon carbide solutions that deliver high efficiency and reliability for industrial and automotive applications. This device reflects ST??s commitment to advanced power modules that meet stringent performance and quality standards, supporting engineers in designing next-generation energy-efficient systems.
FAQ
What is the maximum operating voltage of this power module?
The maximum rated voltage of this device is 600 V, allowing it to be used in a variety of industrial power conversion applications that require robust voltage
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