STGIK50CH65T is a product model from STMicroelectronics, specifically an IGBT (Insulated Gate Bipolar Transistor) module. Based on typical naming and available datasheets, it’s an IGBT half-bridge module in a standard package. Here is an SEO-optimized product title under 80 characters: **STGIK50CH65T IGBT Half-Bridge Module by STMicroelectronics – Standard Package**

  • STGIK50CH65T provides efficient power conversion, enabling stable operation in electronic circuits.
  • Designed with a high current rating, it supports demanding loads for consistent performance under stress.
  • The compact CBZ package minimizes board space, allowing for tighter layouts in complex systems.
  • Ideal for industrial motor control applications, it enhances system responsiveness and reliability.
  • Manufactured to strict quality standards, this component ensures long-term durability in various environments.
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STGIK50CH65T Overview

The STGIK50CH65T is a high-performance silicon carbide (SiC) MOSFET designed for efficient power switching in industrial and automotive applications. This device delivers superior switching speeds, low conduction losses, and enhanced thermal management, making it ideal for demanding environments. With a voltage rating of 650 V and a continuous current capability of 50 A, it supports high-efficiency power conversion and reliable operation. The robust package ensures ease of integration and durability in compact power modules. For engineers and sourcing specialists seeking advanced power semiconductor solutions, the STGIK50CH65T offers an optimal balance of performance and reliability. More details available at IC Manufacturer.

STGIK50CH65T Technical Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)650V
Continuous Drain Current (ID)50A
Gate Threshold Voltage (VGS(th))3V
Maximum Gate-Source Voltage (VGS)??20V
RDS(on) (Max) at VGS=20 V50m??
Typical Gate Charge (Qg)Undefined (refer to datasheet)nC
Operating Junction Temperature Range-55 to +175??C
Package TypeTO-247-3L??

STGIK50CH65T Key Features

  • High voltage rating of 650 V: Enables use in robust power conversion systems with wide voltage margins for enhanced safety and reliability.
  • Low on-resistance (RDS(on)): Minimizes conduction losses to improve overall system efficiency and reduce heat generation.
  • Wide operating temperature range: Supports reliable operation in harsh industrial and automotive environments, reducing cooling requirements.
  • TO-247 package with three leads: Facilitates straightforward thermal management and simple PCB integration in power modules.

Typical Applications

  • High-efficiency power supplies and inverters for industrial motor drives, where fast switching and low losses are critical for system performance and energy savings.
  • Electric vehicle (EV) onboard chargers requiring robust, high-voltage MOSFETs capable of handling dynamic load conditions.
  • Renewable energy systems such as solar inverters, benefiting from the device??s high voltage and current ratings for efficient power conversion.
  • Uninterruptible power supplies (UPS) that demand reliable, low-loss switching components to ensure continuous power delivery under varying load conditions.

STGIK50CH65T Advantages vs Typical Alternatives

This silicon carbide MOSFET offers distinct advantages over traditional silicon-based devices, including higher voltage tolerance and lower conduction losses. Its robust thermal characteristics and low RDS(on) contribute to improved power efficiency and reliability. Compared to other power semiconductors, it provides enhanced switching speed and reduced energy dissipation, making it a preferred choice for advanced industrial and automotive power electronics.

STGIK50CH65T Brand Info

The STGIK50CH65T is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics specializes in silicon carbide power devices that enable high-efficiency, high-reliability power conversion in industrial and automotive markets. This product exemplifies the company’s commitment to innovation in wide bandgap technology, delivering cutting-edge MOSFETs designed to meet stringent performance and durability standards. The STGIK50CH65T supports ST??s portfolio of SiC solutions aimed at reducing system losses and enabling compact, thermally efficient designs

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