STGIB10CH60TS-XZ Infineon IGBT Module 600V 10A 2-Channel Full-Bridge Package

STGIB10CH60TS-XZ Overview

The STGIB10CH60TS-XZ is a high-performance insulated-gate bipolar transistor (IGBT) module designed for industrial power electronics applications. Featuring a collector-emitter voltage rating of 600 V and a continuous collector current of 10 A, this device delivers robust switching capabilities with low conduction and switching losses. Its compact half-bridge configuration supports efficient power conversion and motor control tasks. Engineered for reliability and ease of integration, the module enhances system efficiency and thermal management in demanding environments. For detailed technical insights and sourcing, refer to IC Manufacturer.

STGIB10CH60TS-XZ Technical Specifications

STGIB10CH60TS-XZ Key Features

• 600 V blocking voltage: Enables operation in medium-voltage power conversion, supporting a wide range of industrial applications.
• 10 A continuous current rating: Suitable for moderate power loads ensuring reliable performance under continuous operation.
• Fast switching times: Typical turn-on and turn-off times of 0.11 ??s and 0.25 ??s respectively reduce switching losses and improve efficiency in high-frequency applications.
• Robust thermal capability: Maximum junction temperature of 150 ??C allows stable operation in demanding thermal environments, enhancing module reliability.

Typical Applications

• Industrial motor drives requiring efficient and reliable power switching to optimize motor control and reduce energy consumption.
• Power inverters for renewable energy systems such as solar or wind, benefitting from high switching speeds and voltage ratings.
• Uninterruptible power supplies (UPS) where fast switching and thermal robustness ensure continuous and reliable power delivery.
• General-purpose power conversion modules in factory automation and robotics, where compactness and performance are critical.

STGIB10CH60TS-XZ Advantages vs Typical Alternatives

This IGBT module offers superior switching speed and thermal tolerance compared to traditional discrete transistors, reducing power losses and enhancing system efficiency. Its integrated half-bridge design simplifies circuit layout and improves reliability by minimizing interconnects. The 600 V voltage rating and 10 A current capability provide a balanced solution for medium-power industrial tasks, making it an optimal choice against higher-cost or lower-performance alternatives.

STGIB10CH60TS-XZ Brand Info

The STGIB10CH60TS-XZ is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics specializes in power semiconductor devices including IGBTs, MOSFETs, and modules that enable efficient energy management and power conversion in industrial and automotive sectors. This module is part of ST??s range of high-quality IGBT half-bridge modules designed to deliver robust performance, enhanced thermal management, and ease of integration for demanding applications.

FAQ

What is the maximum voltage rating of this IGBT module?

The module features a maximum collector-emitter voltage rating of 600 V, making it suitable for medium-voltage industrial power conversion applications where reliable voltage blocking is essential.

How does the STGIB10CH60TS-XZ handle thermal stress?

With a maximum junction temperature of 150 ??C, this device can operate stably under high thermal loads. Its design supports efficient heat dissipation, which enhances reliability and allows use in environments with elevated temperatures.

Application	Energy and Power, Industrial Automation, Telecommunications and Networking