STGF20M65DF2 Toshiba IGBT Transistor 650V 20A TO-247 Package

STGF20M65DF2 Overview

The STGF20M65DF2 is a high-performance IGBT module designed for efficient power switching in industrial applications. Featuring a 650 V voltage rating and a continuous collector current of 20 A, this device ensures robust operation under demanding conditions. Its optimized design minimizes switching losses and enhances thermal management, enabling reliable usage in motor drives, renewable energy systems, and power conversion equipment. With a compact form factor and proven ruggedness, it provides engineers with a dependable solution for enhancing power efficiency and system reliability. For more detailed information, visit IC Manufacturer.

STGF20M65DF2 Technical Specifications

STGF20M65DF2 Key Features

• High voltage rating: Supports up to 650 V, enabling use in medium-voltage power conversion systems with enhanced reliability.
• Robust continuous current handling: 20 A collector current capacity ensures suitability for a broad range of industrial motor control and drive applications.
• Low switching losses: Optimized internal structure reduces switching energy, improving overall system efficiency and thermal performance.
• Wide operating temperature range: Rated for junction temperatures up to 150??C, allowing operation in harsh industrial environments.

Typical Applications

• Industrial motor drives: Provides reliable, efficient switching for variable speed drives and servo motor control, enhancing productivity and energy savings.
• Renewable energy inverters: Ideal for photovoltaic and wind power systems requiring efficient power conversion and robust performance.
• Uninterruptible power supplies (UPS): Ensures stable and efficient power switching to maintain continuous power during outages.
• Power factor correction (PFC) circuits: Supports improved power quality by enabling precise switching control in PFC stages.

STGF20M65DF2 Advantages vs Typical Alternatives

This IGBT module offers superior switching efficiency and thermal management compared to typical discrete transistors. Its integrated design reduces parasitic inductance and improves reliability under high load conditions. The elevated voltage and current ratings allow for versatile use in demanding industrial environments, while the wide temperature range supports robust operation where alternatives may fail. These advantages translate into enhanced system performance, reduced maintenance, and lower total cost of ownership.

STGF20M65DF2 Brand Info

The STGF20M65DF2 is manufactured by STMicroelectronics, a global leader in semiconductor technology. STMicroelectronics specializes in power semiconductors that combine high efficiency and ruggedness for industrial and automotive applications. This module is part of their extensive portfolio of IGBT devices designed to meet stringent performance and reliability standards, supporting energy-efficient and sustainable power management solutions worldwide.

FAQ

What is the maximum voltage the STGF20M65DF2 can handle?

This module is rated for a maximum collector-emitter voltage of 650 V, making it suitable for medium-voltage power electronics applications such as motor drives and renewable energy inverters.

Can the device operate at high temperatures?

Yes, it supports an operating junction temperature range up to 150??C, enabling use in environments with elevated thermal stress common in industrial systems.

What type of package does this IGBT module come in?

The device is housed in a DF2 package, which offers compactness and improved thermal diss