STGF10M65DF2 IGBT Transistor 650V 10A – TO-247 Package by STMicroelectronics

  • This device efficiently switches high voltages, enabling effective power control in electronic circuits.
  • Its voltage rating supports robust operation under demanding electrical conditions, ensuring system stability.
  • The compact package design reduces board space, facilitating integration into size-constrained applications.
  • Ideal for power management in industrial equipment, enhancing energy efficiency and operational reliability.
  • Manufactured with quality controls to maintain consistent performance and long-term operational durability.
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STGF10M65DF2 Overview

The STGF10M65DF2 is a high-performance insulated-gate bipolar transistor (IGBT) designed for industrial power switching applications. With a voltage rating of 650V and a continuous current capacity of 10A, this device delivers efficient switching and low conduction losses, making it suitable for demanding environments. Its rugged double-diffused structure enhances reliability under high load conditions, while the fast switching characteristics enable reduced power dissipation. Engineers and sourcing specialists will find this IGBT an effective solution for optimized power management in industrial motor drives, inverters, and power supplies. For detailed technical data and purchasing, visit IC Manufacturer.

STGF10M65DF2 Technical Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCES)650V
Collector Current (IC) – Continuous10A
Gate-Emitter Voltage (VGES)??20V
Power Dissipation (PD)75W
Junction Temperature (Tj)-55 to 150??C
Collector-Emitter Saturation Voltage (VCE(sat))1.65V (typical)
Input Capacitance (Cies)800pF (typical)
Switching Times (ton / toff)75 / 120ns (typical)

STGF10M65DF2 Key Features

  • High voltage rating (650V): Enables operation in medium-voltage power circuits, offering robustness for industrial switching applications.
  • Low saturation voltage: Minimizes conduction losses, improving efficiency and thermal performance in power conversion systems.
  • Fast switching speed: Supports high-frequency operation, which reduces switching losses and enhances overall system efficiency.
  • Wide operating temperature range: Guarantees reliable performance in harsh industrial environments, extending device lifetime.

Typical Applications

  • Motor control drives where high switching speeds and efficiency are critical to reduce energy consumption and improve dynamic response.
  • Industrial inverters for renewable energy systems requiring reliable power conversion and thermal stability.
  • Switched-mode power supplies (SMPS) used in industrial automation and control equipment.
  • Uninterruptible power supplies (UPS) that demand robust switching devices to maintain power integrity during outages.

STGF10M65DF2 Advantages vs Typical Alternatives

This IGBT stands out due to its combination of high voltage capability and low conduction losses, offering superior efficiency compared to standard transistors. Its fast switching characteristics reduce power dissipation, making it ideal for high-frequency industrial applications. Additionally, the robust thermal tolerance ensures reliable operation under demanding conditions, providing a clear advantage over less rugged alternatives in power electronics design.

STGF10M65DF2 Brand Info

The STGF10M65DF2 is manufactured by STMicroelectronics, a leading global semiconductor company known for its innovative power semiconductor solutions. STMicroelectronics specializes in providing reliable IGBTs and MOSFETs for industrial, automotive, and consumer applications. This device reflects ST??s commitment to delivering high-quality components that enable efficient energy management and enhanced system performance in industrial environments.

FAQ

What is the maximum collector current rating of the STGF10M65DF2?

The device supports a continuous collector current of 10 amperes, making it suitable for moderate power industrial applications requiring efficient current handling.

What voltage levels can the STGF10M65DF2 safely operate at?

It is rated for a collector-emitter voltage of 650 volts, allowing it to be used in medium-voltage power switching circuits without compromising reliability.

How does the switching speed impact the performance of this IGBT?

Fast switching

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