STGD5H60DF Overview
The STGD5H60DF is a high-performance silicon carbide (SiC) diode designed to meet the demanding requirements of industrial power conversion and energy management applications. Featuring a 600 V blocking voltage and low forward voltage drop, this device enables efficient energy handling with reduced power losses. Its robust design supports high-temperature operation and fast recovery times, making it ideal for use in inverters, power supplies, and motor drives. Engineers and sourcing specialists will appreciate its reliability and ease of integration, backed by consistent electrical characteristics and rugged packaging. For more detailed product insights, visit IC Manufacturer.
STGD5H60DF Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Maximum Repetitive Peak Reverse Voltage (VRRM) | 600 | V |
| Average Forward Current (IF(AV)) | 5 | A |
| Surge Forward Current (IFSM) | 40 | A |
| Typical Forward Voltage Drop (VF) | 1.7 | V @ IF=5A |
| Reverse Recovery Time (trr) | 35 | ns |
| Operating Junction Temperature (Tj) | -55 to 175 | ??C |
| Thermal Resistance Junction-to-Case (RthJC) | 3.5 | ??C/W |
| Package Type | DFN 3.3 x 3.3 mm | —- |
STGD5H60DF Key Features
- Wide Bandgap Silicon Carbide Technology: Enables higher blocking voltages and lower conduction losses compared to silicon diodes, improving overall system efficiency.
- Low Forward Voltage Drop: Reduces power dissipation during conduction, which translates into better thermal performance and longer device lifetime.
- Fast Reverse Recovery Time: Minimizes switching losses and electromagnetic interference, critical for high-frequency power conversion circuits.
- High Temperature Operation: Supports junction temperatures up to 175??C, allowing for compact thermal management solutions in challenging environments.
Typical Applications
- Power Factor Correction (PFC) circuits in industrial power supplies, where efficient and reliable rectification is essential for reducing energy waste.
- High-frequency inverters for renewable energy systems, ensuring efficient conversion from DC to AC with minimal losses.
- Motor drives requiring robust, fast-recovery diodes to maintain operational efficiency under dynamic load conditions.
- Switch Mode Power Supplies (SMPS) in industrial automation equipment, benefiting from improved thermal stability and switching performance.
STGD5H60DF Advantages vs Typical Alternatives
This silicon carbide diode offers significant advantages over traditional silicon-based diodes, including lower forward voltage and faster switching speeds. These characteristics reduce conduction and switching losses, improving energy efficiency and thermal management. Its ability to operate at higher junction temperatures enhances reliability in harsh industrial environments. Compared to typical alternatives, it supports smaller heatsink sizes and more compact designs, aiding system integration and reducing overall cost.
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STGD5H60DF Brand Info
The STGD5H60DF is manufactured by STMicroelectronics, a global leader in semiconductor technologies. STMicroelectronics specializes in silicon carbide devices that offer superior performance for power electronics applications. This diode is part of their advanced portfolio targeting industrial and automotive sectors, designed to deliver efficiency, robustness, and long-term reliability. With ST??s extensive technical support and quality assurance, the STGD5H60DF is trusted by engineers worldwide for high-voltage, high-efficiency power conversion solutions.
FAQ
What is the maximum operating temperature for the STGD5H60DF?
The device is rated for operation with a junction temperature range from -55??C up to 175??C, enabling it to perform reliably in demanding thermal environments commonly found in industrial power electronics.
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