STGD4M65DF2 STG 65A Dual N-Channel MOSFET, PowerSO-8 Package

STGD4M65DF2 Overview

The STGD4M65DF2 is a high-performance integrated gate driver designed for industrial power electronics applications. This device supports efficient and reliable driving of power MOSFETs or IGBTs, enabling enhanced switching performance and system protection. It features robust input-output isolation, optimized dead-time control, and advanced protection mechanisms, making it ideal for motor drives, renewable energy systems, and power inverters. The compact footprint and low power consumption contribute to improved system integration and thermal management. For detailed technical information and purchasing options, visit IC Manufacturer.

STGD4M65DF2 Technical Specifications

STGD4M65DF2 Key Features

• High Peak Output Current: Delivers up to 4 A peak current enabling fast switching transitions and reduced switching losses in power devices.
• Galvanic Isolation: Provides 5 kV RMS isolation ensuring system safety and noise immunity in harsh industrial environments.
• Programmable Dead-Time Control: Allows fine-tuning of switching intervals to prevent cross-conduction, improving efficiency and reliability.
• Wide Operating Temperature Range: Supports -40??C to 125??C for robust performance in demanding applications.

Typical Applications

• Industrial motor drives requiring precise gate control and high isolation for efficient and safe operation in variable speed environments.
• Renewable energy inverters where reliable switching and thermal stability are critical for power conversion efficiency.
• Power supply units that need compact, isolated gate drivers to enhance switching performance and reduce electromagnetic interference.
• Uninterruptible power supplies (UPS) leveraging isolated gate drivers to maintain high reliability and system protection during power transitions.

STGD4M65DF2 Advantages vs Typical Alternatives

This device offers superior isolation voltage and higher peak output current compared to typical gate drivers, ensuring enhanced safety and faster switching in industrial power circuits. Its programmable dead-time feature reduces switching losses and cross-conduction risks, improving efficiency and device longevity. The wide temperature range and compact packaging allow easier integration into harsh environments, making it a reliable and space-saving alternative for demanding applications.

STGD4M65DF2 Brand Info

The STGD4M65DF2 is part of STMicroelectronics’ portfolio of power management solutions. STMicroelectronics is a global leader in semiconductor manufacturing known for high-quality, innovative integrated circuits. This device reflects ST??s commitment to delivering robust and efficient gate drivers tailored for industrial and automotive applications, combining advanced isolation technology with high-performance power switching capabilities.

FAQ

What type of power devices is this gate driver compatible with?

The gate driver is primarily designed to interface with power MOSFETs and IGBTs, providing the necessary gate voltage and current drive to enable fast, efficient switching in power electronic circuits.

How does the isolation voltage benefit industrial applications?

The 5 kV RMS galvanic isolation protects system components and users by preventing high-voltage transients from propagating between control and power sections, enhancing noise immunity and overall system safety.

Can the dead-time be adjusted in this device?

Yes, the device supports programmable dead-time control, allowing users to optimize switching intervals to prevent shoot-through