STD96N3LLH6 Overview
The STD96N3LLH6 is a high-performance N-channel MOSFET designed for efficient power switching in industrial and automotive applications. With its low on-resistance and fast switching capabilities, it enhances energy efficiency and thermal management in demanding environments. This transistor supports high current loads while maintaining compact packaging for versatile integration. Ideal for engineers and sourcing specialists, the device offers reliable performance in power management circuits and drives. For detailed specifications and procurement, visit IC Manufacturer.
STD96N3LLH6 Technical Specifications
| Parameter | Value |
|---|---|
| Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) | 96 A |
| RDS(on) (Max.) | 3.6 m?? @ VGS=10 V |
| Gate Threshold Voltage (VGS(th)) | 1.0 ?C 2.5 V |
| Total Gate Charge (Qg) | 15 nC |
| Power Dissipation (PD) | 100 W |
| Operating Temperature Range | -55 ??C to +175 ??C |
| Package Type | TO-220 Full Pack |
STD96N3LLH6 Key Features
- Low on-resistance: Minimizes conduction losses, improving overall efficiency in power circuits.
- High continuous current rating: Supports up to 96 A, allowing for robust load handling in demanding applications.
- Fast switching speed: Reduces switching losses, enabling higher frequency operation and improved thermal performance.
- Wide operating temperature range: Ensures reliable performance under harsh environmental conditions.
Typical Applications
- Power management in industrial motor drives, enabling efficient control of high-current motors with reduced energy waste.
- Automotive electronic modules requiring robust and reliable power switching components for vehicle control systems.
- DC-DC converters in telecommunications infrastructure, enhancing power efficiency and thermal stability.
- Battery protection circuits where low on-resistance and high current handling protect against overloads.
STD96N3LLH6 Advantages vs Typical Alternatives
This MOSFET provides superior conduction efficiency with its low on-resistance and high current capacity compared to typical alternatives. Its fast switching capability reduces power losses and thermal stress, enhancing system reliability. Compact packaging supports easier integration in constrained spaces, while a wide temperature range ensures robust operation in industrial and automotive environments.
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STD96N3LLH6 Brand Info
The STD96N3LLH6 is manufactured by STMicroelectronics, a global leader in semiconductor technology known for high-quality discrete and power management devices. STMicroelectronics designs this MOSFET to meet rigorous industrial standards for durability and performance, making it a trusted choice for engineers requiring reliable power components in demanding applications.
FAQ
What is the maximum drain-source voltage rating of this MOSFET?
The maximum drain-source voltage (VDS) rating of this device is 30 volts, which defines the highest voltage the transistor can safely withstand between the drain and source terminals without breakdown.
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How does the on-resistance affect the device??s efficiency?
The low on-resistance (RDS(on)) reduces conduction losses during operation, which directly improves the efficiency of power conversion and minimizes heat generation, enhancing overall system performance.
What is the significance of the gate threshold voltage range?
The gate threshold voltage indicates the voltage at which the MOSFET begins to turn on. The specified range of 1.0 to 2.5 V ensures predictable switching behavior, which is critical for precise control in power circuits.
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Can this MOSFET operate reliably at high temperatures?
Yes, the device supports an operating temperature range from -55 ??C to +175 ??C, enabling stable performance in harsh environments common in industrial and automotive applications.
