STD7N60M2 STMicroelectronics 7A 600V N-Channel MOSFET ?C TO-220 Package

  • Operates as a high-voltage N-channel MOSFET, enabling efficient switching in power management circuits.
  • Supports a drain-to-source voltage suitable for demanding electrical environments, ensuring safe operation.
  • Features a compact package that reduces board space, facilitating design in constrained layouts.
  • Ideal for use in power supplies and motor control, improving energy efficiency and thermal performance.
  • Manufactured with quality processes that promote long-term reliability and consistent electrical characteristics.
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STD7N60M2 Overview

The STD7N60M2 is a high-voltage N-channel power MOSFET designed for efficient switching and robust performance in industrial and consumer electronics. With a maximum drain-source voltage of 600V and a continuous drain current rating suitable for demanding power applications, this device offers low on-resistance and fast switching capabilities. Its rugged construction ensures high reliability under thermal and electrical stress, making it ideal for power conversion, motor drives, and switched-mode power supplies. Sourcing specialists and design engineers benefit from its optimized balance of performance and cost. For more detailed product specifics, visit IC Manufacturer.

STD7N60M2 Technical Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 600 V
Continuous Drain Current (ID) @ 25??C 7.0 A
Gate Threshold Voltage (VGS(th)) 2.0 – 4.0 V
On-State Resistance (RDS(on)) 0.75 ??
Total Gate Charge (Qg) 30 nC
Input Capacitance (Ciss) 600 pF
Operating Junction Temperature (Tj) -55 to 150 ??C
Gate-Source Voltage (VGS) ??30 V
Power Dissipation (PD) 160 W

STD7N60M2 Key Features

  • High voltage capability: Supports up to 600V drain-source voltage, enabling use in a variety of high-voltage power switching applications.
  • Low on-resistance: Minimizes conduction losses, increasing overall efficiency and reducing thermal dissipation requirements.
  • Fast switching speed: Optimized gate charge and input capacitance reduce switching times, beneficial for high frequency power converters.
  • Robust thermal tolerance: Operates reliably across a wide junction temperature range, ensuring durability under demanding conditions.

Typical Applications

  • Switched-mode power supplies (SMPS) where efficient high-voltage switching is critical to power conversion performance.
  • Motor control circuits requiring reliable power MOSFETs to drive inductive loads in industrial or consumer motors.
  • Lighting ballasts and electronic transformers benefiting from the device??s fast switching and thermal robustness.
  • Power management in renewable energy systems such as solar inverters and battery chargers that demand stable high-voltage operation.

STD7N60M2 Advantages vs Typical Alternatives

This device offers superior on-resistance and gate charge balance compared to standard MOSFETs, resulting in lower conduction and switching losses. Its high voltage rating and wide operating temperature range enhance reliability and durability in industrial environments. Compared to typical alternatives, it provides improved efficiency and thermal management, making it a preferred choice for advanced power electronics.

STD7N60M2 Brand Info

The STD7N60M2 is manufactured by STMicroelectronics, a global leader in semiconductor technology. Known for their innovation in power MOSFETs, STMicroelectronics delivers devices with robust performance, high reliability, and cost-effective solutions. This MOSFET is part of their extensive portfolio

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