STD4NK100Z Overview
The STD4NK100Z is a high-performance N-channel MOSFET designed for efficient power switching in industrial and consumer electronics applications. Featuring a low on-resistance and fast switching capability, this device ensures minimal conduction losses and enhanced thermal management. Its robust voltage and current ratings make it suitable for demanding environments requiring reliable and efficient power control. With a compact package and optimized electrical characteristics, the STD4NK100Z delivers excellent performance for power management, motor drives, and DC-DC converter circuits. For more detailed product insights, visit IC Manufacturer.
STD4NK100Z Technical Specifications
| Parameter | Specification |
|---|---|
| Type | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Id) | 4 A |
| Gate Threshold Voltage (Vgs(th)) | 2.0 ?C 4.0 V |
| Drain-Source On-Resistance (Rds(on)) | ?? 0.045 ?? @ Vgs = 10 V |
| Total Gate Charge (Qg) | 21 nC |
| Power Dissipation (Pd) | 1.25 W |
| Operating Junction Temperature (Tj) | -55 to 150 ??C |
| Package Type | TO-220 |
STD4NK100Z Key Features
- Low On-Resistance: Minimizes conduction losses to improve efficiency in power switching applications.
- High Voltage Rating: Supports up to 100 V, enabling reliable operation in medium-voltage circuits.
- Fast Switching Speed: Reduces switching losses, enhancing overall system performance and thermal management.
- Robust Thermal Handling: TO-220 package ensures effective heat dissipation for sustained operation under load.
Typical Applications
- Power management in DC-DC converters where efficient switching and thermal stability are critical for performance and reliability.
- Motor control circuits requiring robust N-channel MOSFETs capable of handling moderate voltage and current ratings.
- Switching regulators designed for industrial automation systems demanding durable and precise power components.
- Load switching in power supplies and battery management units, optimizing efficiency and minimizing power loss.
STD4NK100Z Advantages vs Typical Alternatives
This MOSFET offers a competitive edge with its low on-resistance and high voltage capability, delivering improved power efficiency and thermal performance compared to typical alternatives. Its fast switching characteristics and robust TO-220 package enhance reliability and integration flexibility, making it an ideal choice for engineers seeking durable and efficient power switching solutions.
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STD4NK100Z Brand Info
The STD4NK100Z is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics is known for its wide portfolio of power MOSFETs, offering high efficiency and reliability for various industrial and consumer applications. This particular device exemplifies ST??s commitment to quality and innovation in power management components, supporting engineers with products optimized for performance and durability.
FAQ
What is the maximum drain-source voltage rating of this MOSFET?
The maximum drain-source voltage (Vds) rating for this device is 100 volts, making it suitable for moderate voltage power switching applications where robust voltage tolerance is required.
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How does the on-resistance affect the device??s performance?
A low drain-source on-resistance (Rds(on)) reduces conduction losses, which improves overall efficiency and reduces heat generation during operation. This MOSFET features an Rds(on) of ?? 0.045 ?? at 10 V gate drive, supporting efficient power conversion.
What package type is used and how does it impact thermal management?
The device is housed in a TO-220 package, which provides excellent thermal dissipation capabilities. This allows the MOSFET to operate safely at higher power levels by effectively managing heat buildup during switching.
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Is this MOSFET suitable for motor control applications?
Yes, with a continuous drain current rating of 4 A and a voltage rating of 100 V, this MOSFET is well-suited for motor control circuits that require reliable switching and power handling
