STD46P4LLF6 Infineon IGBT Module 1200V 46A 4-Phase Full-Bridge Power Package

  • Provides precise motor control to optimize system performance and efficiency in various applications.
  • Operates with a voltage range suitable for embedded systems, ensuring stable function under varying conditions.
  • Features a compact LFCSP package that reduces board space and facilitates dense PCB layouts.
  • Ideal for robotics or automation systems, enabling responsive and accurate movement control.
  • Designed with robust protection features to enhance long-term reliability in demanding environments.
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STD46P4LLF6 Overview

The STD46P4LLF6 is a high-performance power MOSFET designed for efficient switching and robust power management in industrial electronics. Featuring a low on-resistance and fast switching capabilities, it ensures minimal power loss and improved thermal performance. This device supports applications requiring high current handling and reliable operation under demanding conditions. Its compact package and optimized electrical characteristics make it suitable for power conversion, motor drives, and power supply designs. For detailed technical support and sourcing, visit the IC Manufacturer.

STD46P4LLF6 Technical Specifications

Parameter Value
Type P-Channel MOSFET
Drain-Source Voltage (VDS) -40 V
Continuous Drain Current (ID) -46 A
On-Resistance (RDS(on)) 4.6 m?? @ VGS=-10 V
Gate Threshold Voltage (VGS(th)) -1.0 V to -3.0 V
Total Gate Charge (Qg) 13 nC
Power Dissipation (PD) 100 W
Package LFPAK56
Operating Temperature Range -55 ??C to 175 ??C

STD46P4LLF6 Key Features

  • Low On-Resistance: Minimizes conduction losses, improving overall system efficiency and reducing heat dissipation.
  • High Continuous Drain Current: Supports up to 46 A, enabling use in high-current power management applications.
  • Fast Switching Speed: Enables efficient operation in switching converters and motor control circuits, reducing switching losses.
  • Robust Thermal Performance: The LFPAK56 package ensures effective heat dissipation for reliable operation in harsh environments.

Typical Applications

  • DC-DC converters and synchronous rectification, where efficient power switching is critical to maximize energy savings and reduce thermal stress.
  • Motor control circuits requiring high current handling and fast switching to deliver precise torque and speed control.
  • Power management modules in industrial and automotive systems, benefiting from low on-resistance and robust thermal characteristics.
  • Battery protection and power distribution units needing reliable switching devices with compact packaging for space-constrained designs.

STD46P4LLF6 Advantages vs Typical Alternatives

This device offers superior efficiency thanks to its low on-resistance and fast switching capabilities compared to standard P-channel MOSFETs. Its high current rating and thermal robustness make it ideal for demanding industrial applications, ensuring longer lifecycle and reduced cooling requirements. The compact LFPAK56 package enhances integration flexibility, providing a competitive advantage in power density and reliability over typical alternatives.

STD46P4LLF6 Brand Info

The STD46P4LLF6 is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics specializes in power MOSFETs designed for industrial, automotive, and consumer electronics markets. The company is known for delivering high-quality, energy-efficient components with advanced packaging and performance features. This product reflects ST??s commitment to innovation and reliability in power management technologies.

FAQ

What is the maximum voltage rating of the STD46P4LLF6?

The maximum drain-source voltage (VDS) for this MOSFET is -40 volts, allowing it to operate safely in systems with supply voltages up to 40 V. This rating ensures protection against voltage spikes and steady-state voltage stresses.

How does the on-resistance affect device performance?

A low on-resistance reduces conduction losses when the MOSFET is switched on, which leads to higher efficiency and less heat generation. For this device, an RDS(on) of 4.6 m?? at VGS = -10 V helps optimize power delivery and reliability.

What package type is used and why is it important?

The MOSFET comes in an LF

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