STD25NF20 Overview
The STD25NF20 is a high-performance N-channel MOSFET designed for efficient power switching and amplification in industrial and consumer electronics. With a maximum drain-source voltage of 200V and a continuous drain current rating suitable for demanding applications, it offers excellent conduction and switching characteristics. Its low on-resistance minimizes power loss and improves thermal management, making it ideal for power management circuits. The device??s robust construction ensures reliable operation under harsh conditions. For detailed specifications and purchasing options, visit IC Manufacturer.
STD25NF20 Technical Specifications
| Parameter | Value |
|---|---|
| Drain-Source Voltage (V_DS) | 200 V |
| Continuous Drain Current (I_D) @ 25??C | 25 A |
| Gate-Source Voltage (V_GS) | ??20 V |
| Drain-Source On-Resistance (R_DS(on)) | ?? 0.085 ?? @ V_GS = 10 V |
| Power Dissipation (P_D) | 150 W |
| Maximum Junction Temperature (T_J) | 150 ??C |
| Gate Charge (Q_g) | Approx. 32 nC |
| Package Type | TO-220 |
STD25NF20 Key Features
- Low On-Resistance: Minimizes conduction losses for improved energy efficiency and heat reduction in power circuits.
- High Voltage Rating: Supports up to 200V drain-source voltage, suitable for a wide range of industrial power applications.
- Robust Thermal Performance: Withstands junction temperatures up to 150??C, enhancing reliability in demanding environments.
- Standard TO-220 Package: Facilitates easy mounting and effective heat dissipation in various electronic assemblies.
Typical Applications
- Switching regulators and DC-DC converters, where efficient power management and fast switching improve overall system performance and reliability.
- Motor control circuits requiring robust current handling and reliable switching under variable loads.
- Power supplies for industrial and consumer electronics, benefiting from low power dissipation and high voltage tolerance.
- Audio amplifiers and class D amplifiers that demand low on-resistance for minimal distortion and heat generation.
STD25NF20 Advantages vs Typical Alternatives
This MOSFET offers a compelling combination of low on-resistance and high voltage rating, providing enhanced efficiency and thermal management compared to typical alternatives. Its 25A continuous current capability and robust TO-220 package ensure dependable performance in industrial and power switching applications. These features translate into improved system reliability and lower energy loss, making it a preferred choice for engineers seeking balance between power handling and efficiency.
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STD25NF20 Brand Info
The STD25NF20 is manufactured by STMicroelectronics, a leading global semiconductor company known for its innovation in power management devices. STMicroelectronics specializes in MOSFETs tailored for industrial, automotive, and consumer applications. This product reflects the company??s commitment to combining high electrical performance with reliable packaging solutions, ensuring seamless integration into complex electronic systems.
FAQ
What is the maximum operating voltage of this MOSFET?
The maximum drain-source voltage (V_DS) rating is 200 volts, allowing the device to operate safely in high-voltage power switching environments without risk of breakdown.
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How does the low on-resistance benefit circuit performance?
Lower on-resistance reduces conduction losses during operation, which minimizes heat generation and improves energy efficiency, leading to longer component life and more reliable system performance.
What package does this device come in, and how does it affect thermal management?
This MOSFET is housed in a TO-220 package, which provides a robust mechanical form factor and effective heat dissipation through an external heat sink, enhancing thermal performance in high-power applications.
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Can this MOSFET handle continuous high current loads?
Yes, with a continuous drain current rating of 25A at 25??C, it is well suited for applications requiring sustained current, provided that adequate cooling measures are implemented.
Is this device suitable for fast switching applications?
Yes, the gate charge value of approximately 32 nC supports efficient switching speeds, making it suitable for
