STD25NF10T4 Overview
The STD25NF10T4 is a high-performance N-channel MOSFET designed for industrial and power management applications. Featuring a low on-resistance and high current handling capability, it ensures efficient power switching and thermal management. Its robust design supports fast switching speeds, making it suitable for various high-frequency applications. Engineered with reliability and efficiency in mind, this device balances performance with ease of integration in power conversion circuits. For detailed technical data and support, visit IC Manufacturer.
STD25NF10T4 Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 100 | V |
| Continuous Drain Current (ID) @ 25??C | 25 | A |
| Drain-Source On-Resistance (RDS(on)) | 0.035 | ?? |
| Gate Threshold Voltage (VGS(th)) | 2.0 – 4.0 | V |
| Gate Charge (Qg) | 45 | nC |
| Total Gate Capacitance (Ciss) | 850 | pF |
| Power Dissipation (PD) | 70 | W |
| Operating Temperature Range | -55 to +175 | ??C |
STD25NF10T4 Key Features
- Low On-Resistance: Minimizes conduction losses, resulting in improved efficiency and reduced heat generation during operation.
- High Current Capability: Supports continuous drain current of 25A, suitable for demanding power applications.
- Fast Switching Speed: Optimized gate charge and capacitance enable rapid switching, beneficial for high-frequency power conversion.
- Wide Operating Temperature Range: Ensures reliable performance in harsh industrial environments, from -55??C up to +175??C.
Typical Applications
- Power management in DC-DC converters, where efficient switching and thermal performance are critical to system reliability and energy savings.
- Motor control circuits requiring robust and precise switching for optimal torque and speed regulation.
- Battery protection and management systems in industrial and automotive sectors.
- High-frequency switching applications including power supplies and inverters demanding fast response and low losses.
STD25NF10T4 Advantages vs Typical Alternatives
This MOSFET offers a competitive low on-resistance paired with a high current rating, delivering enhanced power efficiency and reduced thermal stress compared to typical alternatives. Its fast switching capability and robust temperature tolerance provide engineers with a reliable solution for demanding industrial applications. These advantages facilitate easier integration and improved overall system performance.
🔥 Best-Selling Products
Texas Instruments BQ24075 Linear Battery Charger IC – 5mm x 4mm QFN Package
Texas Instruments INA219 Current Sensor Module – SOIC Package, Precision Monitoring
Texas Instruments LM4041 Precision Voltage Reference – SOT-23 Package
Texas Instruments OPA2134 Audio Op Amp – Dual, High-Performance, SOIC-8 Package
STD25NF10T4 Brand Info
The STD25NF10T4 is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics is known for delivering high-quality power MOSFETs that combine performance, reliability, and cost-effectiveness. This particular model is part of ST??s extensive portfolio targeting industrial power management, offering advanced features suitable for modern electronics design challenges.
FAQ
What is the maximum drain-source voltage rating of this MOSFET?
The maximum drain-source voltage (VDS) rating for the device is 100V, making it suitable for medium voltage applications requiring robust voltage handling capabilities.
🌟 Featured Products
“Buy MAX9312ECJ+ Precision Voltage Comparator in DIP Package for Reliable Performance”
QCC-711-1-MQFN48C-TR-03-1 Bluetooth Audio SoC with MQFN48C Package
0339-671-TLM-E Model – High-Performance TLM-E Package for Enhanced Functionality
1-1415898-4 Connector Housing, Electrical Wire-to-Board, Receptacle, Packaged
How does the on-resistance affect the efficiency of the MOSFET in power applications?
Lower drain-source on-resistance (RDS(on)) reduces conduction losses during operation, which improves overall efficiency. This means less heat is generated, allowing for smaller heat sinks and better thermal management in the final design.
