STD20NF06LT4 Overview
The STD20NF06LT4 is a high-performance N-channel MOSFET designed for efficient power switching and amplification in industrial and consumer electronic applications. Featuring a low on-resistance and fast switching capabilities, this transistor supports high current loads up to 20A and voltages up to 60V, making it ideal for power management circuits and motor control. Its rugged design ensures reliability under demanding conditions, while the logic-level gate drive simplifies interfacing with low-voltage control signals. For detailed information, visit IC Manufacturer.
STD20NF06LT4 Technical Specifications
| Parameter | Specification |
|---|---|
| Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) | 20 A |
| Gate Threshold Voltage (VGS(th)) | 1.0 ?C 3.0 V |
| On-Resistance (RDS(on)) | ?? 0.028 ?? @ VGS = 10 V |
| Total Gate Charge (Qg) | 21 nC (typical) |
| Power Dissipation (PD) | 75 W |
| Package Type | TO-220 Full Pack |
STD20NF06LT4 Key Features
- Low On-Resistance: Minimizes conduction losses, improving overall circuit efficiency and thermal performance during high-current operation.
- Logic-Level Gate Drive Compatibility: Enables direct drive from low-voltage microcontrollers or logic circuits, simplifying design and reducing component count.
- High Continuous Drain Current: Supports up to 20A, making it suitable for robust power control and switching applications.
- Thermally Efficient TO-220 Package: Facilitates effective heat dissipation, enhancing reliability and long-term stability in demanding environments.
Typical Applications
- Power management circuits in industrial automation systems requiring efficient switching and precise load control.
- DC motor drivers where high current and fast switching improve motor performance and response.
- Switching regulators and DC-DC converters that benefit from low on-resistance and reduced gate charge for higher efficiency.
- Load switching and protection circuits in consumer electronics and embedded system designs.
STD20NF06LT4 Advantages vs Typical Alternatives
This transistor offers significant advantages over typical MOSFET alternatives by combining a low on-resistance with a logic-level gate threshold. This reduces power dissipation and simplifies gate drive requirements, enhancing system efficiency and reducing complexity. Its high current handling capacity and thermally efficient package improve reliability in high-demand applications, while fast switching characteristics support advanced power management designs.
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STD20NF06LT4 Brand Info
The STD20NF06LT4 is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics specializes in delivering reliable and high-performance power MOSFETs for industrial and consumer applications. This device is part of their comprehensive portfolio of discrete power transistors designed to meet stringent efficiency and durability requirements across various sectors.
FAQ
What is the maximum voltage rating of this MOSFET?
The maximum drain-to-source voltage rating is 60 volts, which defines the highest voltage the device can withstand between drain and source terminals without breakdown.
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Can this MOSFET be driven directly by a 5V logic signal?
Yes, it features a logic-level gate threshold, typically between 1.0 and 3.0 volts, allowing direct interfacing with 5V logic signals from microcontrollers or other digital circuits without additional driver components.
What is the typical on-resistance at 10V gate drive?
The on-resistance is typically 0.028 ohms when driven with a gate voltage of 10 volts, helping to minimize conduction losses during
