STD16N65M5 Overview
The STD16N65M5 is a high-performance N-channel MOSFET designed for power switching applications requiring robust efficiency and reliability. It offers a maximum drain-source voltage of 650V and a continuous drain current suitable for demanding industrial environments. Engineered with low on-resistance and fast switching capabilities, it enhances power conversion efficiency and thermal management in high-voltage circuits. This MOSFET is ideal for use in power supplies, motor drives, and inverter systems where durability and performance are critical. For sourcing and detailed specifications, visit IC Manufacturer.
STD16N65M5 Technical Specifications
| Parameter | Specification |
|---|---|
| Type | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | 650 V |
| Continuous Drain Current (Id) | 16 A |
| Gate Threshold Voltage (Vgs(th)) | 2.0 V to 4.0 V |
| Max Gate-Source Voltage (Vgs) | ??20 V |
| Static Drain-Source On-Resistance (Rds(on)) | 0.65 ?? @ Vgs=10 V |
| Total Gate Charge (Qg) | 55 nC (typical) |
| Operating Junction Temperature (Tj) | -55??C to +150??C |
STD16N65M5 Key Features
- High voltage capability: Supports up to 650V drain-source voltage, enabling use in high-voltage power conversion and switching applications.
- Low on-resistance: Minimizes conduction losses for improved efficiency and reduced heat dissipation in power circuits.
- Robust thermal performance: Operates reliably across a wide temperature range, supporting demanding industrial environments.
- Fast switching speed: Enhances overall system responsiveness and reduces switching losses in pulse-width modulated applications.
Typical Applications
- High-voltage power supply circuits where efficient switching and thermal reliability are essential for stable operation.
- Motor control and drive systems requiring robust MOSFETs to handle inductive loads and rapid switching.
- Inverter circuits within renewable energy systems, optimizing power conversion efficiency and durability.
- Industrial automation equipment that demands reliable high-voltage switching devices for improved system longevity.
STD16N65M5 Advantages vs Typical Alternatives
This MOSFET offers a superior balance of voltage rating and on-resistance compared to typical alternatives, ensuring lower conduction losses and improved power efficiency. Its robust gate threshold voltage range enhances switching accuracy, and the wide operating temperature range guarantees reliability in harsh industrial conditions. These factors combine to provide a dependable solution for high-voltage switching needs, reducing system downtime and maintenance costs.
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STD16N65M5 Brand Info
The STD16N65M5 is manufactured by STMicroelectronics, a global leader in semiconductor solutions. Known for its innovation in power management devices, STMicroelectronics designs this MOSFET to meet stringent industrial performance standards. The product is part of ST??s extensive portfolio of high-voltage MOSFETs, emphasizing reliability, efficiency, and ease of integration in diverse power electronics applications.
FAQ
What is the maximum voltage rating of this MOSFET?
The maximum drain-source voltage rating is 650 volts, making it suitable for high-voltage power switching applications such as power supplies and motor drives.
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How does the on-resistance affect device performance?
Lower static on-resistance reduces conduction losses and heat generation, which improves overall energy efficiency and allows the MOSFET to handle higher currents with less thermal stress.
What temperature range can this device operate within?
It supports an operating junction temperature range from -55??C up to +150??C, enabling reliable performance in both cold and high-temperature industrial environments.
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Is this MOSFET suitable for fast switching applications?
Yes, the device is designed with fast switching characteristics that minimize switching losses, making it ideal for PWM
