STD13N60M2 Overview
The STD13N60M2 is a high-voltage N-channel MOSFET designed for power switching and amplification in industrial electronics. With a drain-source voltage rating of 600V and a continuous drain current of 13A, it offers robust performance for demanding applications. The device??s low on-resistance ensures energy efficiency, reducing power loss and thermal stress during operation. Its rugged construction supports high-speed switching, making it suitable for use in power supplies, motor controls, and lighting systems. Engineers and sourcing specialists benefit from its reliable specifications and compatibility with standard TO-220 packages. For detailed information, visit IC Manufacturer.
STD13N60M2 Technical Specifications
| Parameter | Value |
|---|---|
| Maximum Drain-Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Id) | 13 A |
| Gate Threshold Voltage (Vgs(th)) | 2.0 ?C 4.0 V |
| Drain-Source On-Resistance (Rds(on)) | ?? 0.75 ?? @ Vgs=10 V |
| Gate Charge (Qg) | Typical 50 nC |
| Power Dissipation (Pd) | 130 W |
| Operating Junction Temperature (Tj) | -55??C to +150??C |
| Package Type | TO-220 |
STD13N60M2 Key Features
- High voltage rating: Supports up to 600V, enabling use in high-voltage industrial power systems with enhanced safety margins.
- Low on-resistance: Minimizes conduction losses, improving overall energy efficiency and reducing heat generation during switching.
- Robust current handling: 13A continuous drain current capacity supports high-load applications such as motor drives and power converters.
- Fast switching capability: Low gate charge ensures quicker transitions, which enhances switching efficiency and reduces electromagnetic interference (EMI).
Typical Applications
- Switched-mode power supplies (SMPS) requiring reliable high-voltage MOSFETs to efficiently convert electrical power with minimal losses.
- Industrial motor control circuits utilizing the device??s high current and voltage ratings for dynamic speed and torque regulation.
- Lighting ballasts and electronic dimmers where fast switching and low on-resistance improve performance and longevity.
- Inverter circuits for renewable energy systems such as solar or wind, benefiting from robust power switching and thermal stability.
STD13N60M2 Advantages vs Typical Alternatives
This MOSFET offers a compelling combination of high voltage tolerance and low on-resistance that outperforms many typical alternatives in efficiency and thermal management. Its ability to handle 13A continuous current with a 600V rating makes it suitable for heavy industrial loads, while its fast switching reduces switching losses. Compared to similar devices, it provides enhanced reliability and integration ease, lowering system complexity and improving overall performance in industrial power electronics.
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STD13N60M2 Brand Info
The STD13N60M2 is manufactured by STMicroelectronics, a leading global semiconductor company known for delivering high-quality power MOSFETs optimized for industrial and automotive applications. The device is part of ST??s portfolio of robust MOSFETs designed to meet stringent requirements in switching efficiency, thermal performance, and ruggedness. STMicroelectronics provides extensive datasheets, application notes, and design support to facilitate seamless integration of this MOSFET into complex power systems.
FAQ
What is the maximum operating voltage of this MOSFET?
The device supports a maximum drain-source voltage of 600 volts, making it suitable for high-voltage switching applications in industrial environments. This ensures it can withstand voltage spikes and maintain reliable operation under demanding conditions.
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How does the on-resistance affect device performance?
Lower drain-source on-resistance reduces conduction losses when the MOSFET is turned on. This improves energy efficiency, decreases heat generation, and allows for better thermal management, which is critical in maintaining device reliability and longevity.
Is this MOSFET suitable for high-speed switching applications?
Yes, the device features a relatively low gate charge, enabling fast switching transitions. This reduces switching losses and electromagnetic interference, making it appropriate for applications such as switched
