STD130N6F7 N-Channel MOSFET Transistor, 130V, 7.5A, TO-220 Package by STMicroelectronics

STD130N6F7 Overview

The STD130N6F7 is a high-performance N-channel MOSFET designed for efficient power switching and management in industrial and consumer electronics. Featuring a low on-resistance of 0.013?? and a maximum drain-source voltage rating of 60V, it delivers reliable operation under demanding electrical conditions. Its fast switching capability and robust thermal characteristics make it ideal for applications requiring high efficiency and durability. Sourced from a trusted supplier, this MOSFET combines excellent electrical performance with compact packaging, supporting integration in space-constrained designs. For detailed specifications and purchasing options, visit IC Manufacturer.

STD130N6F7 Technical Specifications

STD130N6F7 Key Features

• Low On-Resistance (0.013??) ?C Minimizes conduction losses, improving overall power efficiency and reducing heat generation in high-current applications.
• High Continuous Drain Current Capability (130A) ?C Supports heavy load switching, enabling robust performance in demanding power conversion and motor control circuits.
• Wide Operating Temperature Range ?C Ensures reliable function in harsh industrial environments, extending device longevity and system uptime.
• Fast Switching Speed ?C Reduces switching losses, making it suitable for high-frequency DC-DC converters and switching power supplies.

Typical Applications

• Power management in industrial motor drives, where efficient switching and thermal stability are critical for operational reliability.
• High-current DC-DC converters, facilitating efficient voltage regulation in power supply modules.
• Load switching in automotive electronics, providing robust performance under varying temperature and current demands.
• Battery management systems for energy storage, enhancing charge/discharge efficiency with low conduction losses.

STD130N6F7 Advantages vs Typical Alternatives

This MOSFET offers superior efficiency with its low R_DS(on) and ability to handle high continuous current, reducing power dissipation compared to typical alternatives. Its wide gate voltage tolerance and thermal endurance improve reliability under harsh conditions. The TO-220 package allows easy heat sinking and integration, making it a practical choice for engineers seeking high performance combined with robust thermal management in power switching applications.

STD130N6F7 Brand Info

The STD130N6F7 is manufactured by STMicroelectronics, a global leader in semiconductor solutions focused on innovation and quality. STMicroelectronics?? portfolio includes advanced power MOSFETs designed to optimize energy efficiency and system performance. This particular device leverages ST??s expertise in power transistor design, ensuring reliable operation in demanding industrial and automotive environments. The brand is recognized for consistent product availability, comprehensive technical documentation, and worldwide support.

FAQ

What is the maximum voltage rating for the STD130N6F7?

The maximum drain-source voltage (V_DS) for this MOSFET is 60 volts, making it suitable for moderate voltage power switching applications where voltage spikes must be controlled within this limit.

How does the low on-resistance benefit power efficiency?

A low R_DS(on) value of 0.013 ohms reduces the conduction losses when the MOSFET is in the on-state. This directly improves power efficiency by minimizing wasted