STD12NF06L-1 Overview
The STD12NF06L-1 is a robust N-channel MOSFET designed for high-efficiency power switching applications. With a maximum drain-source voltage rating of 60 V and a low on-resistance of 12 m??, it offers excellent conduction efficiency and reduced power loss. Its logic-level gate drive capability enables direct interfacing with low-voltage control signals, improving system integration and simplifying design. This transistor is well-suited for various industrial and automotive circuits requiring reliable switching and low thermal dissipation. For more detailed information, visit IC Manufacturer.
STD12NF06L-1 Technical Specifications
| Parameter | Specification |
|---|---|
| Type | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Id) @ 25??C | 12 A |
| On-Resistance (Rds(on)) @ Vgs=10 V | 12 m?? (max) |
| Gate Threshold Voltage (Vgs(th)) | 1.0 V (min) ?C 2.5 V (max) |
| Total Gate Charge (Qg) | 22 nC |
| Power Dissipation (Pd) | 60 W |
| Operating Temperature Range | -55??C to +150??C |
| Package | TO-220 |
STD12NF06L-1 Key Features
- Low On-Resistance: Minimizes conduction losses, enhancing efficiency in power switching circuits.
- Logic-Level Gate Drive: Enables direct control from low-voltage microcontrollers or logic circuits, simplifying drive requirements.
- High Current Handling: Supports continuous drain current up to 12 A, suitable for demanding load conditions.
- Robust Thermal Performance: TO-220 package allows effective heat dissipation, improving reliability and longevity.
Typical Applications
- Power management in DC-DC converters and voltage regulators, where efficient switching and low losses are critical for system performance.
- Motor control circuits requiring fast and reliable switching of moderate power loads.
- Battery-powered devices where logic-level gate drive reduces complexity and power consumption.
- Industrial automation systems that demand rugged components with stable operation over wide temperature ranges.
STD12NF06L-1 Advantages vs Typical Alternatives
This MOSFET delivers superior switching efficiency due to its low on-resistance and logic-level gate compatibility, reducing power dissipation compared to typical MOSFETs with higher Rds(on). Its robust current rating and thermal performance improve reliability in demanding industrial environments. The ability to drive directly from low-voltage logic signals simplifies design and integration, providing a distinct advantage over devices requiring higher gate voltages.
🔥 Best-Selling Products
Texas Instruments BQ24075 Linear Battery Charger IC – 5mm x 4mm QFN Package
Texas Instruments INA219 Current Sensor Module – SOIC Package, Precision Monitoring
Texas Instruments LM4041 Precision Voltage Reference – SOT-23 Package
Texas Instruments OPA2134 Audio Op Amp – Dual, High-Performance, SOIC-8 Package
STD12NF06L-1 Brand Info
The STD12NF06L-1 is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics specializes in power management devices and MOSFETs designed for industrial, automotive, and consumer applications. This product exemplifies ST??s commitment to delivering high-performance transistors that combine efficiency, reliability, and ease of use in power switching designs.
FAQ
What is the maximum drain current rating of this MOSFET?
The device supports a maximum continuous drain current of 12 A at 25??C. This allows it to handle moderate to high load currents commonly required in power switching and motor control applications.
🌟 Featured Products
“Buy MAX9312ECJ+ Precision Voltage Comparator in DIP Package for Reliable Performance”
QCC-711-1-MQFN48C-TR-03-1 Bluetooth Audio SoC with MQFN48C Package
0339-671-TLM-E Model – High-Performance TLM-E Package for Enhanced Functionality
1-1415898-4 Connector Housing, Electrical Wire-to-Board, Receptacle, Packaged
Can the STD12NF06L-1 be driven directly by a 5 V logic signal?
Yes, this MOSFET features logic-level gate drive capability, enabling it to fully switch on with gate voltages as low as 5 V. This simplifies interfacing with microcontrollers and digital logic circuits without the need for additional driver stages.
What is the significance of the low on-resistance in this transistor?
The low on-resistance (12 m?? max at 10 V gate drive) reduces conduction losses during operation, improving energy efficiency and minimizing heat generation, which is critical for maintaining system reliability and reducing cooling requirements.
