STD120N4LF6 N-Channel MOSFET 120V 4A Transistor in LFPAK56 Package by STMicroelectronics

STD120N4LF6 Overview

The STD120N4LF6 is a high-performance N-channel MOSFET designed for efficient power switching and load management in industrial and automotive applications. This device features a low on-resistance, enabling minimal conduction losses and enhanced thermal performance. With a voltage rating suitable for 40V applications and a robust package ensuring reliable operation, it offers engineers a compact and reliable solution for power management. The transistor is optimized for fast switching and low gate charge, making it ideal for applications requiring high efficiency and rapid response. Available from IC Manufacturer, it supports demanding environments with consistent electrical and thermal characteristics.

STD120N4LF6 Technical Specifications

STD120N4LF6 Key Features

• Low On-Resistance: The device offers an exceptionally low R_DS(on) of 4.2 m??, reducing conduction losses and improving overall power efficiency during switching operations.
• High Current Capability: Supports continuous drain currents up to 120A at 25??C, enabling it to handle heavy loads without compromising reliability.
• Optimized Gate Charge: With a total gate charge of 28 nC, the transistor switches rapidly, minimizing switching losses and improving system responsiveness.
• Robust Thermal Performance: Operates reliably across a wide junction temperature range (-55??C to +150??C), suitable for harsh industrial environments.

Typical Applications

• DC-DC converters requiring efficient, low-loss power switching for voltage regulation in industrial power supplies.
• Motor control circuits in automotive and industrial automation systems where rapid switching and high current handling are essential.
• Load switch applications that benefit from fast switching times and low conduction losses to improve system efficiency.
• Battery management systems, providing reliable power control and protection in electric vehicles and energy storage solutions.

STD120N4LF6 Advantages vs Typical Alternatives

This transistor delivers superior performance with its low on-resistance and high current rating, outperforming many standard MOSFETs in power efficiency and thermal stability. Its fast switching capability reduces energy losses, while the robust LFPAK56 package ensures mechanical reliability. Compared to typical alternatives, it offers a balanced combination of sensitivity and power handling, making it ideal for demanding industrial and automotive power management tasks.

STD120N4LF6 Brand Info

The STD120N4LF6 is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics is renowned for its innovation in power management devices, offering reliable and high-efficiency MOSFETs for industrial and automotive markets. This product benefits from ST??s advanced silicon processes and packaging technology, ensuring high performance and durability in challenging environments.

FAQ

What is the maximum voltage rating of the STD120N4LF6?

The device is rated for a maximum drain-source voltage (V_DS) of 40 volts, making it suitable for applications operating within this voltage range while ensuring safe and reliable operation.

How does the low on-resistance benefit power efficiency?

A low R_DS(on) value of 4.2 m?? minimizes conduction losses when the transistor is in the on state. This