STD10NF30 N-Channel MOSFET Transistor, 30V 10A, TO-220 Package by STMicroelectronics

  • This MOSFET enables efficient switching for power management, improving energy use and thermal performance.
  • With a low on-resistance, it reduces conduction losses, enhancing overall circuit efficiency and device longevity.
  • The compact package design saves board space and supports high-density applications in constrained layouts.
  • Ideal for use in DC-DC converters, it helps maintain stable voltage regulation under varying load conditions.
  • Manufactured to meet industry standards, it ensures consistent performance and durability in demanding environments.
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STD10NF30 Overview

The STD10NF30 is a high-performance N-channel MOSFET designed for efficient switching and power management in industrial and consumer electronics. It features a low on-resistance and fast switching capabilities, making it ideal for applications requiring high current handling and minimal power loss. This device is well-suited for use in DC-DC converters, motor drivers, and power supply circuits where reliability and thermal performance are critical. For engineers and sourcing specialists looking for a robust MOSFET solution, the IC Manufacturer offers this component with proven electrical characteristics and durable package options.

STD10NF30 Technical Specifications

ParameterSpecification
Drain-Source Voltage (VDS)300 V
Continuous Drain Current (ID)10 A
Gate Threshold Voltage (VGS(th))2.0 ?C 4.0 V
Maximum Gate-Source Voltage (VGS)??20 V
Drain-Source On-Resistance (RDS(on))0.75 ?? @ VGS=10 V
Total Gate Charge (Qg)30 nC (typical)
Power Dissipation (PD)60 W
Operating Junction Temperature (TJ)-55 to +150 ??C

STD10NF30 Key Features

  • High Voltage Rating: Supports up to 300 V drain-source voltage, enabling use in high-voltage switching applications and power conversion circuits.
  • Low On-Resistance: Offers a low RDS(on) of 0.75 ?? at 10 V gate drive, reducing conduction losses and improving system efficiency.
  • Fast Switching Speed: Minimal total gate charge ensures quick switching transitions, beneficial for high-frequency power electronics and reducing switching losses.
  • Robust Thermal Performance: Rated for up to 60 W power dissipation with reliable operation up to 150 ??C junction temperature, ensuring durability in demanding environments.

Typical Applications

  • Switching regulators and DC-DC converters where efficient power switching and thermal management are critical for energy savings and component longevity.
  • Motor control circuits requiring fast switching and high current capability for precise speed and torque control.
  • Power management modules in industrial automation and control systems, offering reliability under varying load conditions.
  • General-purpose low-side switching and load driving in appliances and consumer electronics demanding robust and stable MOSFET performance.

STD10NF30 Advantages vs Typical Alternatives

This MOSFET provides a competitive edge with its combination of high voltage capability and low on-resistance, resulting in reduced power loss and enhanced efficiency. Compared to typical alternatives, it offers reliable operation at elevated temperatures and fast switching speeds, which translate to improved thermal management and system responsiveness. Its robust gate voltage tolerance and power dissipation ratings make it well-suited for industrial-grade applications requiring long-term stability and precise control.

STD10NF30 Brand Info

The STD10NF30 is manufactured by STMicroelectronics, a global leader in semiconductor solutions. Known for its high-quality power MOSFETs, STMicroelectronics provides this model as part of its extensive portfolio targeting industrial and automotive markets. The device is designed with advanced silicon technology to meet stringent performance and reliability standards, ensuring consistent operation in demanding applications.

FAQ

What is the maximum voltage rating for the STD10NF30 MOSFET?

The device is rated for a maximum drain-source voltage of 300 V, making it suitable for high-voltage switching applications and providing ample headroom for various power management scenarios.

How does the on-resistance affect the efficiency of this MOSFET?

The low on-resistance value of 0.75 ?? at a

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