STD100N10F7 STMicroelectronics N-Channel MOSFET 100V 100A TO-220F Package

  • Provides efficient power switching for electronic circuits, enhancing overall system performance and control.
  • Features a low on-resistance value, reducing power loss and improving energy efficiency in operation.
  • Encased in a compact package, it saves board space, enabling denser and more flexible PCB designs.
  • Ideal for use in power management modules where reliable switching improves device longevity and stability.
  • Manufactured with strict quality controls to ensure consistent performance and long-term reliability under varied conditions.
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STD100N10F7 Overview

The STD100N10F7 is a high-performance N-channel MOSFET designed for efficient power switching and management in industrial and automotive applications. Featuring a nominal drain-source voltage rating of 100V and a continuous drain current suitable for demanding loads, this device provides excellent conduction and switching characteristics. Its low on-resistance and fast switching times contribute to improved system efficiency and thermal management. The robust design ensures reliable operation under harsh conditions, making it a preferred choice for power conversion, motor control, and high-frequency switching circuits. For detailed technical support and procurement, visit IC Manufacturer.

STD100N10F7 Technical Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)100V
Continuous Drain Current (ID) @ 25??C100A
Gate Threshold Voltage (VGS(th))2.0 to 4.0V
Maximum Gate-Source Voltage (VGS)??20V
Drain-Source On-Resistance (RDS(on)) @ VGS=10V8.5m??
Total Gate Charge (Qg)45nC
Power Dissipation (PD)300W
Operating Junction Temperature (Tj)-55 to +150??C

STD100N10F7 Key Features

  • High Voltage Capability: Rated for 100V drain-source voltage, enabling use in demanding power systems and industrial environments.
  • Low On-Resistance: With an RDS(on) of just 8.5 m?? at 10V gate drive, this MOSFET minimizes conduction losses, improving overall efficiency.
  • Fast Switching Performance: Total gate charge of 45 nC allows for rapid switching, reducing switching losses and enhancing performance in high-frequency applications.
  • Robust Thermal Handling: High power dissipation rating of 300W supports reliable operation under heavy load and elevated temperatures.

Typical Applications

  • Power management in DC-DC converters, where efficient switching and low losses are critical to system performance and energy savings.
  • Motor drive circuits for industrial automation, providing precise control and high current capability for electric motors.
  • Automotive electronic systems requiring rugged, high-voltage MOSFETs for load switching and power regulation.
  • High-frequency switching power supplies, benefiting from low gate charge and fast switching characteristics to enhance efficiency.

STD100N10F7 Advantages vs Typical Alternatives

This MOSFET offers a compelling combination of low on-resistance and high voltage rating, outperforming many standard devices in terms of conduction and switching efficiency. Its robust thermal dissipation and high current capability improve reliability and integration flexibility. Compared to typical alternatives, this device reduces power loss and enhances system durability, making it ideal for demanding industrial and automotive applications.

STD100N10F7 Brand Info

The STD100N10F7 is manufactured by STMicroelectronics, a global leader in semiconductor technology. Known for their innovation and quality, STMicroelectronics provides a comprehensive range of power MOSFETs designed to meet the stringent requirements of industrial and automotive sectors. The STD100N10F7 exemplifies the brand??s commitment to high performance, energy efficiency, and reliability in power management solutions.

FAQ

What is the maximum drain-source voltage rating of this MOSFET?

The maximum drain

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