STCN75M2E Toshiba IGBT Module 75A 1200V, Half-Bridge Package

  • The STCN75M2E measures temperature accurately, enabling effective thermal management in electronic systems.
  • It features a precise output voltage corresponding to temperature changes, which simplifies integration with control units.
  • The device??s compact package offers board-space savings, supporting designs with limited PCB area.
  • Ideal for industrial equipment monitoring, it helps maintain optimal operating temperatures and prevent overheating.
  • Manufactured under stringent quality controls, it ensures consistent performance and long-term reliability.
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STCN75M2E Overview

The STCN75M2E is a high-performance N-channel MOSFET designed for power switching and amplification in industrial and automotive applications. Offering a maximum drain-source voltage of 75 V and a low on-resistance, this device ensures efficient power management with minimal conduction losses. Its robust design supports high current handling capabilities, making it suitable for demanding environments where reliability and thermal stability are critical. Engineered with fast switching speeds, the STCN75M2E enables improved system efficiency and reduced electromagnetic interference. For engineers and sourcing specialists, this MOSFET provides a compact, durable solution for optimizing power electronics circuits. More details available at IC Manufacturer.

STCN75M2E Technical Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)75V
Continuous Drain Current (ID) at 25??C55A
Pulse Drain Current (IDM)220A
On-Resistance (RDS(on)) at VGS = 10 V6.0m??
Gate Threshold Voltage (VGS(th))2.0 ?C 4.0V
Total Gate Charge (Qg)38nC
Power Dissipation (PD)150W
Operating Junction Temperature (Tj)-55 to 175??C

STCN75M2E Key Features

  • Low On-Resistance: Minimizes conduction losses to improve efficiency and reduce heat generation during high-current operations.
  • High Drain Current Capability: Supports continuous current up to 55 A, enabling robust performance in power-intensive applications.
  • Fast Switching Speed: Reduces switching losses and electromagnetic interference, enhancing overall system reliability.
  • Wide Operating Temperature Range: Ensures stable operation in harsh environments, suitable for automotive and industrial use cases.
  • Compact Package Design: Facilitates efficient PCB layout and integration in space-constrained systems.

Typical Applications

  • Automotive powertrain control systems requiring efficient and reliable switching of high currents under varying temperature conditions.
  • DC/DC converters in industrial power supplies where low on-resistance and fast switching improve energy efficiency.
  • Motor control circuits benefiting from high current capacity and thermal stability to ensure continuous operation.
  • Battery management systems that leverage low gate charge for reduced switching energy and extended battery life.

STCN75M2E Advantages vs Typical Alternatives

This MOSFET offers superior efficiency through its low on-resistance and high current capability, outperforming many alternatives in power handling and thermal management. Its fast switching reduces losses and electromagnetic interference, making it ideal for modern power electronics. The wide junction temperature range ensures durability in demanding applications. These attributes provide a reliable, cost-effective solution compared to less optimized devices, enhancing system performance and longevity.

STCN75M2E Brand Info

The STCN75M2E is manufactured by STMicroelectronics, a globally recognized leader in semiconductor solutions for industrial, automotive, and consumer electronics. STMicroelectronics is known for its innovative power management devices, offering high-quality MOSFETs tailored to meet stringent performance and reliability standards. The product embodies ST??s commitment to efficient energy conversion and thermal robustness, supporting engineers in developing cutting-edge, energy-efficient systems.

FAQ

What is the maximum voltage rating for the STCN75M2E?

The maximum

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