STB8N65M5 Overview
The STB8N65M5 is a high-performance N-channel MOSFET designed for robust switching and power management in industrial electronics. With a voltage rating of 650V and low on-resistance, it delivers efficient energy transfer and minimal power loss. This transistor is engineered to handle high current loads while maintaining thermal stability, making it an ideal choice for power supply circuits, motor drives, and other demanding applications. Its rugged design supports reliable operation in harsh environments. For detailed data and sourcing, visit IC Manufacturer.
STB8N65M5 Technical Specifications
| Parameter | Value |
|---|---|
| Type | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | 650 V |
| Continuous Drain Current (Id) | 8 A |
| Gate Threshold Voltage (Vgs(th)) | 2.0 ?C 4.0 V |
| Static Drain-Source On-Resistance (Rds(on)) | 0.85 ?? at Vgs=10 V |
| Total Gate Charge (Qg) | 27 nC (typical) |
| Power Dissipation (Pd) | 50 W |
| Operating Junction Temperature (Tj) | -55 to +150 ??C |
| Package | TO-220 |
STB8N65M5 Key Features
- High Voltage Capability: Supports up to 650V drain-source voltage, enabling use in high-voltage power conversion and switching applications with safety margin.
- Low On-Resistance: Minimizes conduction losses, improving overall system efficiency and reducing thermal stress during continuous operation.
- Robust Current Handling: Rated for 8A continuous drain current, allowing reliable performance in demanding power stages and motor control circuits.
- Thermal Stability: Wide operating temperature range (-55??C to +150??C) ensures dependable operation under harsh environmental conditions.
Typical Applications
- Switch Mode Power Supplies (SMPS): Efficient switching transistor for high-voltage power conversion, improving performance and energy savings in industrial and consumer electronics.
- Motor Control Drives: Suitable for driving DC motors and brushless motor controllers requiring robust switching with low losses.
- Lighting Ballasts: Enables reliable high-voltage switching for electronic ballasts in fluorescent and LED lighting systems.
- Industrial Automation Equipment: Used in power management circuits within factory automation systems where durability and efficiency are critical.
STB8N65M5 Advantages vs Typical Alternatives
This MOSFET offers a compelling balance of high voltage rating and low on-resistance, outperforming many alternatives by reducing switching losses and thermal buildup. Its robust 8A current capacity and TO-220 package enhance ease of integration and heat dissipation. Compared to similar devices, it provides reliable operation across a broad temperature range, making it a preferred choice for industrial power applications demanding both efficiency and durability.
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STB8N65M5 Brand Info
The STB8N65M5 is produced by STMicroelectronics, a global leader in semiconductor technology known for innovative power management solutions. STMicroelectronics designs this MOSFET to meet stringent industrial standards, combining advanced silicon technology and rigorous quality control. The device is part of ST??s comprehensive portfolio of high-voltage discrete components, widely adopted in power electronics for automotive, industrial, and consumer markets.
FAQ
What is the maximum voltage rating for this MOSFET?
The device supports a maximum drain-source voltage of 650 volts, making it suitable for high-voltage switching applications such as power supplies and motor drives.
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How does the on-resistance affect performance?
Lower on-resistance reduces conduction losses during operation, which improves efficiency and reduces heat generation. This helps maintain reliability and can simplify thermal management in your design.
What package type is used for the STB8N65M5?
This MOSFET is housed in a TO-220 package, providing excellent thermal conductivity and ease of mounting to heat sinks for effective heat dissipation.
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Is this MOSFET suitable for high-temperature environments?
Yes, it operates reliably over a wide
