STB80NF55-06T4 Infineon IGBT Transistor Module – 80A 550V – 4-Pin Module Package

  • This component efficiently switches and controls electrical power, enhancing circuit performance and energy management.
  • Its low on-resistance reduces power loss, improving overall efficiency in high-current applications.
  • The device??s compact package minimizes board space, facilitating dense electronic designs and easier integration.
  • Ideal for power supply circuits, it helps regulate voltage and current to maintain system stability.
  • Manufactured under strict quality controls, it ensures consistent operation and long-term reliability.
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STB80NF55-06T4 Overview

The STB80NF55-06T4 is a high-performance N-channel MOSFET designed for efficient power switching in industrial and automotive applications. With a low on-resistance of just 0.045 ?? and a maximum drain current rating of 80 A, it offers excellent conduction capabilities. This transistor supports a drain-source voltage up to 55 V, making it suitable for a variety of mid-voltage circuits. Its robust design ensures reliable operation under high thermal and electrical stress, contributing to longer device lifetimes. Ideal for use in power management, motor control, and load switching systems, this device provides engineers with a balance of performance, efficiency, and durability. For more detailed product information, visit IC Manufacturer.

STB80NF55-06T4 Technical Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)55V
Continuous Drain Current (ID) at 25??C80A
Gate Threshold Voltage (VGS(th))2.0 – 4.0V
Drain-Source On-Resistance (RDS(on))0.045??
Gate Charge (Qg)38nC
Total Gate-Source Charge (Qgs)10nC
Maximum Power Dissipation (PD)150W
Operating Junction Temperature (TJ)-55 to +150??C

STB80NF55-06T4 Key Features

  • Low On-Resistance: The device??s RDS(on) of 0.045 ?? reduces conduction losses, improving overall energy efficiency in power circuits.
  • High Current Capacity: Supports continuous drain currents up to 80 A, enabling effective handling of heavy loads in demanding industrial environments.
  • Fast Switching Capabilities: With a moderate gate charge, it ensures quick transitions, reducing switching losses and enhancing system response times.
  • Wide Temperature Range: Operates reliably from -55??C to +150??C, suitable for harsh industrial and automotive conditions.

Typical Applications

  • Power management and DC/DC converters where efficient switching and thermal performance are critical for maintaining system stability and reducing energy consumption.
  • Motor control circuits in industrial automation, providing robust switching capability for driving motors with high current demands.
  • Load switching and relay replacement in automotive electronics, enhancing system reliability and reducing mechanical wear.
  • Power supplies and inverters requiring high current handling and low conduction losses for improved energy efficiency and device longevity.

STB80NF55-06T4 Advantages vs Typical Alternatives

This MOSFET offers a combination of low on-resistance and high current capacity that outperforms many standard transistors in similar voltage classes. Its optimized gate charge enables faster switching with reduced power losses, making it a reliable choice for high-efficiency designs. Additionally, its broad operating temperature range and robust power dissipation capability provide enhanced durability and stability compared to typical alternatives in industrial and automotive applications.

STB80NF55-06T4 Brand Info

The STB80NF55-06T4 is a product from STMicroelectronics, a global leader in semiconductor technology. Known for innovation and quality, STMicroelectronics designs this MOSFET to meet the demanding requirements of industrial and automotive markets. The company integrates rigorous quality control and advanced manufacturing processes to ensure high reliability and performance. This device benefits from ST??s extensive expertise in power MOSFETs, offering

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