STB6N60M2 Overview
The STB6N60M2 is a high-voltage N-channel MOSFET designed for power switching and amplification applications. It features a voltage rating of 600 V and a continuous drain current of 6 A, making it suitable for industrial and consumer electronics requiring efficient power management. The device offers low on-resistance and fast switching speeds, contributing to reduced power losses and improved thermal performance. Its rugged design supports reliable operation under demanding electrical conditions. For more detailed technical resources and purchasing options, visit IC Manufacturer.
STB6N60M2 Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 600 | V |
| Continuous Drain Current (ID) | 6 | A |
| Gate Threshold Voltage (VGS(th)) | 2.0 ?C 4.0 | V |
| Drain-Source On-Resistance (RDS(on)) | 0.85 | ?? |
| Maximum Gate-Source Voltage (VGS) | ??20 | V |
| Total Gate Charge (Qg) | 30 | nC |
| Power Dissipation (PD) | 150 | W |
| Operating Junction Temperature Range | -55 to 150 | ??C |
| Package Type | TO-220 | – |
STB6N60M2 Key Features
- High voltage rating: Supports up to 600 V, enabling use in a wide range of power conversion and motor control applications.
- Low on-resistance: Minimizes conduction losses, improving overall efficiency and reducing thermal stress during operation.
- Robust gate drive capability: ??20 V maximum gate voltage allows flexible interfacing with various driver circuits.
- Fast switching speed: Optimizes switching performance for efficient power management in high-frequency applications.
Typical Applications for STB6N60M2 Power MOSFET
- Switch-mode power supplies (SMPS) where high-voltage handling and efficient switching are critical for compact and reliable designs.
- Industrial motor drives requiring robust switching elements capable of sustaining high voltages and currents.
- Lighting ballasts and electronic transformers benefiting from low losses and thermal stability.
- Consumer electronics power stages that demand reliable and efficient power switching components.
STB6N60M2 Advantages vs Typical Alternatives
This MOSFET offers a balanced combination of high voltage tolerance and low on-resistance, providing superior power efficiency compared to typical alternatives. Its rugged construction supports reliable operation under high thermal and electrical stress. The device??s fast switching and gate voltage flexibility enhance integration ease and performance in demanding industrial and commercial electronics applications.
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STB6N60M2 Brand Info
The STB6N60M2 is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics is renowned for its innovation in power devices, offering products that combine performance, robustness, and cost-effectiveness. This MOSFET is part of ST??s portfolio targeting power management applications, delivering reliable switching with industry-standard packaging for ease of use in various industrial and consumer circuits.
FAQ
What is the maximum drain-source voltage rating of this MOSFET?
The device has a maximum drain-source voltage rating of 600 V, enabling it to handle high-voltage circuits typical in industrial and power supply applications safely.
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How does the low on-resistance benefit circuit performance?
Low on-resistance reduces conduction losses during operation, resulting in improved energy efficiency and lower heat generation. This enhances device reliability and reduces thermal management requirements.
What package type is used for this MOSFET?
The component is provided in a TO-220 package, which offers ease of mounting and effective heat dissipation suitable for medium
