STB57N65M5 Overview
The STB57N65M5 is a high-performance N-channel MOSFET designed for efficient power switching applications. Featuring a maximum drain-source voltage of 650V and a low on-resistance, this device ensures optimal conduction with minimal power loss. Its robust avalanche energy capability makes it suitable for demanding industrial environments where reliability and durability are critical. The transistor??s fast switching speed and rugged construction enable efficient energy management in power supplies, motor controls, and inverter circuits. For detailed technical support and sourcing, visit IC Manufacturer.
STB57N65M5 Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 650 | V |
| Continuous Drain Current (ID) | 57 | A |
| On-Resistance (RDS(on)) | 0.057 | ?? |
| Gate Threshold Voltage (VGS(th)) | 3.0 – 4.0 | V |
| Total Gate Charge (Qg) | 46 | nC |
| Maximum Power Dissipation (PD) | 300 | W |
| Operating Junction Temperature (TJ) | -55 to 175 | ??C |
| Avalanche Energy (EAS) | 450 | mJ |
STB57N65M5 Key Features
- High Voltage Capability: Supports up to 650V drain-source voltage, enabling use in high-voltage power conversion and motor drive applications.
- Low On-Resistance: Minimizes conduction losses, improving system efficiency and reducing thermal stress during operation.
- Robust Avalanche Energy Handling: Provides excellent protection against energy surges, enhancing device reliability in inductive load switching.
- Fast Switching Performance: Optimized gate charge enables rapid switching, supporting high-frequency operation and reducing switching losses.
Typical Applications
- Industrial motor control circuits requiring efficient high-voltage switching with robust thermal and avalanche energy tolerance.
- Switch mode power supplies (SMPS) where low conduction and switching losses improve overall power efficiency.
- Inverter circuits used in renewable energy systems such as solar and wind power converters.
- General-purpose power management in industrial automation and lighting ballast controls.
STB57N65M5 Advantages vs Typical Alternatives
This device offers superior performance metrics such as a low on-resistance combined with high avalanche energy capability, which distinguishes it from typical MOSFET alternatives. Its ability to handle high voltages and currents with low gate charge results in improved energy efficiency and faster switching speeds. These attributes contribute to enhanced reliability and power density in industrial power electronics designs.
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STB57N65M5 Brand Info
The STB57N65M5 is manufactured by STMicroelectronics, a global leader in semiconductor solutions. Known for its innovation in power transistors, STMicroelectronics delivers devices tailored for high-voltage and high-current applications. This MOSFET series reflects the company??s commitment to quality, performance, and reliability, making it a trusted choice in industrial and power management sectors worldwide.
FAQ
What is the maximum drain-source voltage rating of this MOSFET?
The device is rated for a maximum drain-source voltage of 650V, making it suitable for high-voltage switching applications such as industrial motor drives and power supplies.
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How does the on-resistance affect the efficiency of the device?
A low on-resistance reduces conduction losses during operation, which minimizes heat generation and improves overall system efficiency. This helps
