STB55NF06LT4 N-Channel MOSFET 55V 55A TO-220AB Package ?C STMicroelectronics

  • This MOSFET provides efficient switching control, reducing power loss in electronic circuits for improved performance.
  • It features a low on-resistance, which minimizes heat generation and enhances energy efficiency during operation.
  • The compact package design ensures easy integration into tight PCB layouts, saving valuable board space.
  • Ideal for power management in consumer electronics, it enables stable voltage regulation under varying loads.
  • Manufactured to meet strict quality standards, this component offers dependable long-term reliability in demanding environments.
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STB55NF06LT4 Overview

The STB55NF06LT4 is a high-performance N-channel MOSFET designed for efficient power switching and amplification in industrial and consumer electronics. Featuring a low on-resistance and fast switching capabilities, it ensures reduced conduction losses and improved thermal management in compact circuits. This device supports voltage ratings suitable for various medium-power applications, making it a versatile choice for engineers seeking reliable semiconductor components. Its robust construction and optimized electrical parameters enable seamless integration into switching power supplies, motor control, and load management systems. For detailed product specifications and purchasing options, visit the IC Manufacturer.

STB55NF06LT4 Technical Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)60V
Continuous Drain Current (ID)55A
Gate Threshold Voltage (VGS(th))2 – 4V
Drain-Source On-State Resistance (RDS(on))?? 0.022??
Total Gate Charge (Qg)45nC
Gate-Source Voltage (VGS)??20V
Power Dissipation (PD)120W
Operating Junction Temperature (Tj)-55 to +175??C

STB55NF06LT4 Key Features

  • Low On-Resistance: With an RDS(on) as low as 0.022 ??, this MOSFET minimizes conduction losses, increasing overall system efficiency.
  • High Continuous Current Handling: Supports continuous drain currents up to 55 A, suitable for demanding load conditions without compromising reliability.
  • Wide Operating Temperature Range: Rated to operate from -55??C to +175??C, ensuring stable performance in harsh industrial environments.
  • Fast Switching Capability: Total gate charge of 45 nC enables rapid switching, reducing switching losses and improving power conversion efficiency.

Typical Applications

  • Switched-mode power supplies (SMPS): Efficient switching capabilities help improve power conversion in high-frequency applications.
  • Motor control circuits: Robust current handling and low RDS(on) make it ideal for driving motors in industrial automation.
  • Battery management systems: Suitable for load switching and protection due to its high voltage and current ratings.
  • DC-DC converters: Provides reliable switching in compact power regulation modules across varied industrial electronics.

STB55NF06LT4 Advantages vs Typical Alternatives

This MOSFET offers a competitive balance of low on-resistance and high current capacity compared to similar devices, ensuring improved efficiency and thermal performance. Its robust voltage rating and wide temperature tolerance provide enhanced reliability over typical alternatives. The fast switching characteristics reduce power losses, making it a preferred choice for high-frequency industrial applications requiring precision and durability.

STB55NF06LT4 Brand Info

The STB55NF06LT4 is part of the STMicroelectronics portfolio, a global leader in semiconductor manufacturing. STMicroelectronics specializes in producing high-quality discrete MOSFETs designed for industrial and automotive applications. This particular MOSFET reflects the brand??s commitment to combining performance with reliability, supporting engineers in developing efficient and compact electronic systems. The product benefits from ST??s rigorous quality control and extensive application support, making it a trusted component across diverse power management solutions.

FAQ

What is the maximum voltage rating for the STB55NF06LT4?

The device supports a maximum drain-source

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