STB47N50DM6AG Overview
The STB47N50DM6AG is a high-performance N-channel MOSFET designed for power switching applications requiring robust voltage and current handling capabilities. Rated for a 500 V drain-source voltage and optimized for low on-resistance, it ensures efficient energy management in industrial and automotive systems. Its vertical structure and DMOS technology provide fast switching speeds and superior thermal performance, making it ideal for high-frequency power converters and motor control circuits. The device supports enhanced reliability and integration into compact electronic designs, meeting the demands of engineers and sourcing specialists looking for durable and efficient power transistors. More details are available from IC Manufacturer.
STB47N50DM6AG Technical Specifications
| Parameter | Specification |
|---|---|
| Drain-Source Voltage (VDS) | 500 V |
| Continuous Drain Current (ID) | 47 A |
| Gate Threshold Voltage (VGS(th)) | 2.0 ?C 4.0 V |
| Max Gate-Source Voltage (VGS) | ??20 V |
| Drain-Source On-Resistance (RDS(on)) | 66 m?? @ VGS=10 V |
| Power Dissipation (PD) | 250 W |
| Operating Junction Temperature (Tj) | -55 ??C to 175 ??C |
| Package Type | TO-247 |
STB47N50DM6AG Key Features
- High voltage rating of 500 V enables safe operation in demanding power electronics environments.
- Low on-resistance reduces conduction losses, improving overall system efficiency and thermal performance.
- Robust continuous drain current capacity of 47 A supports high load conditions with reliable switching.
- Wide operating temperature range ensures stable performance in harsh industrial and automotive applications.
- TO-247 package offers excellent thermal dissipation and ease of mounting in power circuits.
Typical Applications
- Used in power converters and inverters for industrial motor drives, enabling efficient energy conversion with high switching speeds and durability.
- Ideal for automotive systems such as electric vehicle power management and battery protection circuits.
- Suitable for uninterruptible power supplies (UPS) where reliable high-voltage switching is critical.
- Applied in switched-mode power supplies (SMPS) for consumer and industrial electronics requiring compact and efficient power regulation.
STB47N50DM6AG Advantages vs Typical Alternatives
This device offers a combination of high voltage tolerance and low on-resistance, providing superior efficiency and thermal management compared to typical MOSFETs in the same class. Its robust current handling and wide temperature range make it a reliable choice for demanding industrial environments. The TO-247 package enhances heat dissipation, allowing for more compact designs without compromising performance or longevity.
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STB47N50DM6AG Brand Info
The STB47N50DM6AG is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics is known for its innovation in power transistor technologies and commitment to quality. This specific MOSFET leverages the company’s expertise in DMOS technology to deliver high-voltage, high-current performance suitable for power management applications across automotive, industrial, and consumer markets. ST??s rigorous testing and quality assurance ensure this component meets stringent reliability standards.
FAQ
What is the maximum drain-source voltage rating of this MOSFET?
The maximum drain-source voltage rating is 500 V, which allows the device to be used safely in high-voltage power switching applications without risk of breakdown under normal operating conditions.
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How does the on-resistance affect the device performance?
The drain-source on-resistance of 66 m?? at 10 V gate drive minimizes conduction losses, improving efficiency and reducing heat generation during operation, which is critical for power-sensitive applications.
What package type does this device use and why is it important?
This MOSFET is housed in a TO-
