STB33N65M2 Overview
The STB33N65M2 is a high-voltage N-channel MOSFET designed for robust switching applications in industrial and power electronics. With a drain-source voltage rating of 650V and a drain current capacity suited for medium to high power demands, it delivers reliable performance in power conversion and motor control circuits. This device features low on-resistance and fast switching speeds, optimizing efficiency and thermal management in demanding environments. Its rugged construction supports high avalanche energy capability, making it ideal for applications requiring high surge tolerance. For detailed datasheets and manufacturing standards, visit IC Manufacturer.
STB33N65M2 Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (Vds) | 650 | V |
| Continuous Drain Current (Id) at 25??C | 33 | A |
| Gate Threshold Voltage (Vgs(th)) | 2.0 ?C 4.0 | V |
| Maximum Power Dissipation (Ptot) | 150 | W |
| Rds(on) (Max) at Vgs = 10 V | 0.175 | ?? |
| Gate Charge (Qg) Total | 60 | nC |
| Operating Junction Temperature Range (Tj) | -55 to 150 | ??C |
| Package Type | TO-220 | – |
STB33N65M2 Key Features
- High Voltage Rating: With a 650V drain-source voltage, it supports demanding power switching applications requiring high voltage blocking capability.
- Low On-Resistance: The low Rds(on) value reduces conduction losses, improving overall energy efficiency and reducing heat dissipation in power circuits.
- Fast Switching Performance: Optimized gate charge characteristics enable faster switching speeds, enhancing performance in switching power supplies and motor drives.
- Robust Thermal Handling: With a maximum power dissipation of 150W and wide temperature range, this MOSFET ensures reliability under harsh operating conditions.
Typical Applications
- Switching power supplies: Ideal for high-voltage, medium-current power conversion circuits where efficiency and thermal performance are critical.
- Motor control circuits: Supports industrial motor drives requiring fast switching and high voltage capability for smooth operation.
- Lighting ballasts: Suitable for electronic ballast designs due to its high voltage rating and low losses during switching cycles.
- Industrial inverters: Efficiently handles power conversion in inverter circuits used in renewable energy and industrial automation systems.
STB33N65M2 Advantages vs Typical Alternatives
This MOSFET stands out with its combination of high voltage rating and low on-resistance, offering superior efficiency and thermal performance compared to standard devices. Its fast switching capability reduces switching losses, enhancing power conversion efficiency. Additionally, the robust package and wide operating temperature range improve reliability in industrial environments, making it a preferred choice over typical alternatives that may lack equivalent surge tolerance or thermal handling.
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STB33N65M2 Brand Info
The STB33N65M2 is manufactured by STMicroelectronics, a global leader in semiconductor solutions with a strong portfolio in power MOSFETs. STMicroelectronics focuses on delivering devices engineered for high performance and reliability in industrial and automotive applications. This product reflects their commitment to quality, combining advanced silicon technology with stringent testing standards to meet demanding power management requirements.
FAQ
What is the maximum drain-source voltage rating of this MOSFET?
The device is rated for a maximum drain-source voltage (Vds) of 650V, which allows it to handle high-voltage switching tasks commonly found in industrial power electronics.
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