STB30NF20L Overview
The STB30NF20L is a high-performance N-channel MOSFET designed for efficient switching and power management in industrial and consumer electronics. Its low on-resistance and robust current handling make it ideal for applications requiring reliable, high-speed switching with minimal conduction losses. Engineered to deliver optimized thermal performance and durability under demanding operating conditions, it supports engineers and sourcing specialists looking for a cost-effective solution that balances performance and efficiency. For detailed technical insights and sourcing options, visit IC Manufacturer.
STB30NF20L Technical Specifications
| Parameter | Value |
|---|---|
| Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 200 V |
| Continuous Drain Current (ID) | 30 A |
| Gate Threshold Voltage (VGS(th)) | 2.0 ?C 4.0 V |
| On-Resistance (RDS(on)) | 0.085 ?? @ VGS = 10 V |
| Power Dissipation (PD) | 75 W |
| Gate Charge (Qg) | 38 nC |
| Operating Temperature Range | -55 ??C to 150 ??C |
| Package Type | TO-220 |
STB30NF20L Key Features
- Low On-Resistance: Minimizes conduction losses to improve overall efficiency in high-current switching applications.
- High Drain Current Capability: Supports continuous currents up to 30 A, enabling use in power-intensive environments.
- Robust Voltage Rating: Withstands up to 200 V drain-source voltage, suitable for a wide range of industrial power circuits.
- Fast Switching Speed: Enables efficient operation in PWM and switching power supplies, reducing switching losses and heat generation.
Typical Applications
- Power management in industrial automation systems where reliable switching and thermal stability are critical for long-term operation.
- DC-DC converters requiring efficient high-current handling and low conduction losses to maximize energy savings.
- Motor control circuits that demand rapid switching and robust voltage tolerance to drive various motor types effectively.
- Power supply units for consumer electronics that benefit from compact packaging and high electrical performance.
STB30NF20L Advantages vs Typical Alternatives
This MOSFET offers a compelling balance of low on-resistance and high current capacity, outperforming many comparable devices in efficiency and thermal handling. Its 200 V rating provides versatility across multiple power levels, while the TO-220 package supports effective heat dissipation. These advantages make it a reliable choice for engineers seeking durable, high-performance switching solutions with enhanced power efficiency compared to standard MOSFET alternatives.
🔥 Best-Selling Products

Texas Instruments BQ24075 Linear Battery Charger IC – 5mm x 4mm QFN Package

Texas Instruments INA219 Current Sensor Module – SOIC Package, Precision Monitoring

Texas Instruments LM4041 Precision Voltage Reference – SOT-23 Package

Texas Instruments OPA2134 Audio Op Amp – Dual, High-Performance, SOIC-8 Package
STB30NF20L Brand Info
The STB30NF20L is manufactured by STMicroelectronics, a leading global semiconductor company known for innovation and quality in power management components. STMicroelectronics focuses on delivering reliable and efficient MOSFETs tailored for industrial and consumer applications. This product embodies the company??s commitment to performance and durability, backed by extensive technical support and global availability.
FAQ
What is the maximum continuous drain current rating for this MOSFET?
The device supports a continuous drain current of up to 30 A, enabling it to handle high current loads in industrial and power management applications without compromising reliability.
🌟 Featured Products

“Buy MAX9312ECJ+ Precision Voltage Comparator in DIP Package for Reliable Performance”

QCC-711-1-MQFN48C-TR-03-1 Bluetooth Audio SoC with MQFN48C Package

0339-671-TLM-E Model – High-Performance TLM-E Package for Enhanced Functionality

1-1415898-4 Connector Housing, Electrical Wire-to-Board, Receptacle, Packaged
What package type does this MOSFET come in, and why is it significant?
It is supplied in a TO-220 package, which is widely used for power semiconductors due to its excellent thermal dissipation capabilities,






