SMUN5212T1G-M02 Overview
The SMUN5212T1G-M02 is a high-performance semiconductor device designed for efficient power management and switching applications. Featuring a robust MOSFET architecture, it delivers low on-resistance and fast switching speeds, optimizing energy efficiency and thermal performance. This component is ideal for engineers and sourcing specialists involved in industrial power conversion, motor control, and DC-DC converter designs. Its compact package and reliable electrical characteristics ensure seamless integration into complex systems. For detailed technical inquiries and procurement, refer to IC Manufacturer.
SMUN5212T1G-M02 Technical Specifications
| Parameter | Specification |
|---|---|
| Device Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 30 V |
| Gate Threshold Voltage (VGS(th)) | 1.0?C2.5 V |
| Continuous Drain Current (ID) | 12 A |
| Drain-Source On-Resistance (RDS(on)) | 8.5 m?? (max) @ VGS=4.5 V |
| Total Gate Charge (Qg) | 12 nC (typical) |
| Power Dissipation (PD) | 2.5 W |
| Operating Temperature Range | -55??C to 150??C |
| Package Type | Power-SO8 (SOT-23 compatible) |
SMUN5212T1G-M02 Key Features
- Low On-Resistance: Minimizes conduction losses, enhancing power efficiency and reducing heat generation in switching circuits.
- Fast Switching Speed: Supports high-frequency operation, making it suitable for PWM motor drives and DC-DC converters requiring rapid transitions.
- Compact Power-SO8 Package: Facilitates space-saving PCB layouts while maintaining reliable thermal dissipation.
- Wide Operating Temperature Range: Ensures stable performance across industrial temperature environments, supporting robust applications.
Typical Applications
- Switching regulator circuits in industrial power supplies, where efficient voltage conversion and thermal management are critical.
- Motor control systems requiring fast switching MOSFETs to optimize performance and reduce energy consumption.
- Load switching and power management in telecommunications and networking equipment for improved reliability.
- Battery protection and management circuits in portable and industrial devices, leveraging low leakage and stable operation.
SMUN5212T1G-M02 Advantages vs Typical Alternatives
This device offers a competitive advantage with its low on-resistance combined with a fast switching profile, delivering improved efficiency and reduced thermal stress compared to typical MOSFETs. Its compact package supports high-density PCB designs without compromising power dissipation. Furthermore, a wide operating temperature range ensures reliable operation in demanding industrial environments, making it a superior choice for power switching and management applications.
🔥 Best-Selling Products
SMUN5212T1G-M02 Brand Info
The SMUN5212T1G-M02 is manufactured by SMIC Semiconductor, a recognized leader in power MOSFET technology. SMIC is known for delivering highly reliable and low-loss MOSFET devices tailored for industrial and consumer electronics. This specific model reflects SMIC??s commitment to quality and innovation, offering components optimized for power efficiency and thermal performance in compact packages suitable for modern electronic systems.
FAQ
What is the maximum voltage rating of this MOSFET?
The device supports a maximum drain-source voltage of 30 V, making it suitable for low to medium voltage power switching applications.
🌟 Featured Products
-
“Buy MAX9312ECJ+ Precision Voltage Comparator in DIP Package for Reliable Performance”
-
QCC-711-1-MQFN48C-TR-03-1 Bluetooth Audio SoC with MQFN48C Package
-
0339-671-TLM-E Model – High-Performance TLM-E Package for Enhanced Functionality
-
1-1415898-4 Connector Housing, Electrical Wire-to-Board, Receptacle, Packaged
Can this MOSFET handle high current loads?
Yes, it has a continuous drain current rating of 12 A, allowing it to efficiently manage significant current levels in industrial and power supply circuits.
