SL3S1206FUD2/HAPZ Overview
The SL3S1206FUD2/HAPZ is a high-performance power semiconductor device designed for efficient switching and power management in industrial and automotive applications. It features a robust 1200 V blocking voltage and a low on-resistance, enabling enhanced energy efficiency and thermal performance under demanding conditions. With a compact package and optimized electrical characteristics, this component meets rigorous industry standards, ensuring reliability and long-term operation in power conversion systems. Engineers and sourcing specialists can rely on this device for reducing system losses and improving overall power density. For more details, visit IC Manufacturer.
SL3S1206FUD2/HAPZ Technical Specifications
| Parameter | Specification |
|---|---|
| Blocking Voltage (VDS) | 1200 V |
| Continuous Drain Current (ID) | 33 A |
| On-Resistance (RDS(on)) | 0.035 ?? @ VGS = 10 V |
| Gate Threshold Voltage (VGS(th)) | 3.0 – 4.5 V |
| Total Gate Charge (Qg) | 65 nC |
| Input Capacitance (Ciss) | 1200 pF |
| Maximum Power Dissipation (PD) | 150 W |
| Operating Junction Temperature (Tj) | -55 ??C to +175 ??C |
SL3S1206FUD2/HAPZ Key Features
- High Blocking Voltage: Rated at 1200 V, suitable for high-voltage power conversion applications, ensuring robust performance and safety margins.
- Low On-Resistance: With a RDS(on) of 0.035 ??, it reduces conduction losses, improving energy efficiency and thermal management in power circuits.
- Optimized Gate Charge: The moderate total gate charge of 65 nC allows fast switching, minimizing switching losses and enhancing overall device efficiency.
- Wide Operating Temperature Range: Supports operation from -55 ??C up to +175 ??C, enabling reliable performance in harsh industrial and automotive environments.
SL3S1206FUD2/HAPZ Advantages vs Typical Alternatives
This device offers a superior combination of high voltage rating and low on-resistance compared to typical power MOSFETs in its class, enabling lower conduction and switching losses. Its robust thermal capabilities and optimized gate charge also provide enhanced efficiency and reliability, making it an ideal choice for demanding power electronics applications where performance and durability are critical.
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Typical Applications
- Industrial motor drives and inverters, where high voltage handling and low conduction losses improve system efficiency and reliability during continuous operation.
- Automotive powertrain systems requiring robust power devices capable of operating under wide temperature ranges and harsh conditions.
- Power supplies and converters used in renewable energy systems, benefiting from the device??s high voltage rating and efficient switching characteristics.
- Uninterruptible power supplies (UPS) and energy storage systems demanding reliable and efficient power switching components.
SL3S1206FUD2/HAPZ Brand Info
This product is manufactured under the stringent quality standards of a leading semiconductor supplier specializing in power devices. It is engineered to meet the highest industry requirements for performance, reliability, and efficiency. The device??s design reflects advanced semiconductor fabrication technologies to deliver consistent electrical characteristics and long-term operational stability, supported by comprehensive technical documentation and global distribution.
FAQ
What is the maximum continuous drain current for this power MOSFET?
The maximum continuous drain current is rated at 33 A, allowing for substantial current handling capacity in power switching and conversion applications, ensuring the device supports high-load requirements efficiently.
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How does the low on-resistance impact system performance?
A lower on-resistance reduces conduction losses during operation, which leads to improved energy efficiency and reduced heat generation. This enhances thermal performance and can extend the lifespan of the power device and the overall system.
What operating temperature range does the device support?
The device is rated for operation between -55 ??C and +175 ??C, making it suitable for use in environments with extreme temperatures, such as automotive under-hood applications and industrial machinery.
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Is the total gate charge suitable for high-frequency switching?
Yes, with a total gate charge of 65 nC, the device enables relatively fast switching speeds, minimizing switching losses and improving efficiency in high-frequency power conversion circuits.
What kind of applications is this power MOSFET mainly designed for?
It is primarily designed for high-voltage power conversion applications including industrial motor drives, automotive electronics, renewable energy inverters, and uninterruptible power supplies where reliability and efficiency are critical.
