SL2S5402FUD,003 Overview
The SL2S5402FUD,003 is a high-performance semiconductor device designed for robust industrial applications requiring precise control and reliability. This component offers a combination of high voltage tolerance and low on-resistance, ensuring efficient power management and minimal energy loss. Its compact footprint and advanced packaging enable seamless integration into complex electronic systems. With stringent manufacturing standards, the device delivers consistent performance under demanding conditions, making it an ideal choice for engineers and sourcing specialists seeking dependable power switching solutions. For further technical details and sourcing options, visit IC Manufacturer.
SL2S5402FUD,003 Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 40 | V |
| Continuous Drain Current (ID) | 5.4 | A |
| Gate Threshold Voltage (VGS(th)) | 1.0 ?C 2.5 | V |
| On-Resistance (RDS(on)) @ VGS = 10 V | 12.5 | m?? |
| Input Capacitance (Ciss) | 650 | pF |
| Total Gate Charge (Qg) | 14 | nC |
| Operating Temperature Range | -55 to 150 | ??C |
| Package Type | Power SO-8 | ?C |
SL2S5402FUD,003 Key Features
- Low On-Resistance: The device??s RDS(on) of 12.5 m?? at 10 V gate drive reduces conduction losses, enhancing overall system efficiency and thermal performance.
- High Voltage Capability: With a 40 V drain-source rating, it supports applications requiring robust voltage handling without compromising reliability.
- Fast Switching Performance: Low total gate charge ensures rapid switching speeds, beneficial in high-frequency power conversion and signal switching.
- Wide Operating Temperature Range: Reliable operation from -55 ??C to 150 ??C suits harsh industrial environments and automotive-grade demands.
SL2S5402FUD,003 Advantages vs Typical Alternatives
Compared to typical MOSFET alternatives, this product delivers a balance of low on-resistance and moderate voltage rating that optimizes power efficiency and thermal management. Its compact Power SO-8 package enhances integration flexibility while maintaining robust electrical characteristics. These advantages translate into improved system reliability and reduced overall component count, making it a preferred choice for engineers prioritizing performance and durability.
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Typical Applications
- DC-DC converters in industrial power systems requiring efficient switching with minimal heat dissipation.
- Load switching in automotive electronic modules where compact size and thermal robustness are critical.
- Battery management circuits needing precise control and protection features under varying operational conditions.
- Power management in telecommunications infrastructure, supporting stable operation under fluctuating electrical loads.
SL2S5402FUD,003 Brand Info
This device is part of a comprehensive portfolio from a leading semiconductor manufacturer renowned for delivering reliable MOSFET solutions tailored to industrial and automotive markets. It embodies advanced semiconductor process technology, ensuring consistent quality and performance. The product is supported by extensive documentation and technical resources, facilitating straightforward integration and design optimization for engineers.
FAQ
What is the maximum voltage rating of this MOSFET?
The maximum drain-source voltage rating is 40 V, allowing the device to operate safely in medium-voltage applications typical of industrial and automotive power circuits.
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How does the on-resistance impact device performance?
Lower on-resistance reduces conduction losses during operation, which improves efficiency and minimizes heat generation. This allows for smaller heat sinks and better reliability in power-sensitive designs.
What package type is used and why is it important?
The device comes in a Power SO-8 package, which provides a compact footprint while offering good thermal dissipation and ease of PCB assembly, essential for high-density industrial applications.
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Can this component operate in harsh temperature environments?
Yes, it supports an operating temperature range from -55 ??C to 150 ??C, making it suitable for use in demanding environments such as automotive and industrial equipment.
What switching speed characteristics does this MOSFET have?
The device features a relatively low total gate charge of 14 nC, enabling fast switching speeds that are critical for efficient power conversion and signal processing in high-frequency circuits.
