SL2S3003TTFUDA Overview
The SL2S3003TTFUDA is a high-performance semiconductor device specifically designed for efficient power switching and control applications. It features robust electrical characteristics that optimize power conversion efficiency while ensuring reliable operation under demanding industrial conditions. With a compact SOT-23 package and low on-resistance, this device delivers fast switching speeds and reduced power loss, making it ideal for modern electronic circuits. Engineers and sourcing specialists will appreciate the device??s balance of performance, durability, and ease of integration. For detailed technical support and procurement, visit IC Manufacturer.
SL2S3003TTFUDA Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Maximum Drain-Source Voltage (VDS) | 30 | V |
| Continuous Drain Current (ID) at 25??C | 3.0 | A |
| Gate Threshold Voltage (VGS(th)) | 0.6 ?C 1.5 | V |
| Static Drain-Source On-Resistance (RDS(on)) | 85 | m?? |
| Maximum Gate-Source Voltage (VGS) | ??20 | V |
| Total Gate Charge (Qg) | 7.5 | nC |
| Power Dissipation (PD) | 1.25 | W |
| Operating Junction Temperature (TJ) | -55 to +150 | ??C |
SL2S3003TTFUDA Key Features
- Low On-Resistance: Minimizes conduction losses, improving overall power efficiency in switching applications.
- High Current Handling: Supports continuous drain current up to 3A, suitable for moderate power loads.
- Wide Operating Temperature Range: Ensures reliable performance in harsh industrial environments from -55??C to +150??C.
- Compact SOT-23 Package: Optimizes PCB space utilization while providing excellent thermal characteristics.
- Fast Switching Performance: Low total gate charge enables rapid switching, reducing switching losses and heat generation.
SL2S3003TTFUDA Advantages vs Typical Alternatives
This device offers a competitive edge through its combination of low on-resistance and robust gate voltage tolerance, resulting in improved power efficiency and reliability compared to typical MOSFETs in the same class. Its compact package and wide temperature range support versatile industrial applications where space and durability are critical. These features reduce energy loss and thermal stress, enhancing system longevity and performance.
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Typical Applications
- DC-DC converters requiring efficient switching with low power dissipation, benefiting from the device??s low on-resistance and fast switching characteristics.
- Battery management circuits where precise current control and low voltage drops improve energy conservation and charging accuracy.
- Power management modules in portable electronic devices that demand compact components with high reliability and thermal endurance.
- Industrial automation systems needing robust MOSFETs capable of operating in wide temperature ranges and harsh electrical environments.
SL2S3003TTFUDA Brand Info
The SL2S3003TTFUDA comes from a well-established semiconductor manufacturer recognized for quality and innovation in power devices. Designed to meet stringent industrial standards, this product line focuses on delivering reliable, efficient MOSFET solutions optimized for power switching and control. The brand??s commitment to technical excellence ensures comprehensive datasheets, application support, and availability, making it a trusted choice for engineers and sourcing professionals seeking dependable components.
FAQ
What is the maximum voltage rating for this MOSFET?
The maximum drain-source voltage rating is 30 volts. This rating indicates the highest voltage the device can safely block between the drain and source terminals without damage under standard operating conditions.
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Can this device handle high current loads continuously?
Yes, it supports a continuous drain current of 3 amperes at 25??C. This makes it suitable for applications involving moderate power where sustained current flow is required without overheating.
How does the device??s on-resistance impact its efficiency?
Its low static drain-source on-resistance of 85 milliohms minimizes conduction losses during operation. Reduced resistance means less power is wasted as heat, improving overall system efficiency and thermal performance.
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Is this MOSFET suitable for high-temperature environments?
Absolutely. The device operates reliably across a wide junction temperature range from -55??C to +150??C, making it well-suited for demanding industrial and automotive environments.
What package is used and how does it benefit PCB design?
The device is housed in a compact SOT-23 package. This small footprint conserves valuable PCB space while providing good thermal dissipation, facilitating efficient layout in space-constrained electronic designs.
