SL2S2002FUD,003 Overview
The SL2S2002FUD,003 is a high-performance semiconductor device optimized for power switching applications. Designed to deliver efficient energy management and reliable operation in industrial environments, this component ensures robust performance with low on-resistance and fast switching capabilities. Its compact form factor supports seamless integration into complex circuitry, making it suitable for engineers and sourcing specialists focused on enhancing system efficiency. The device??s thermal and electrical properties are tailored for demanding applications, providing durability and long-term reliability. For more product information, visit IC Manufacturer.
SL2S2002FUD,003 Technical Specifications
| Parameter | Specification |
|---|---|
| Type | N-channel MOSFET |
| Drain-Source Voltage (VDS) | 200 V |
| Continuous Drain Current (ID) | 20 A |
| Gate Threshold Voltage (VGS(th)) | 2.0 ?C 4.0 V |
| On-Resistance (RDS(on)) | 10 m?? @ VGS=10 V |
| Total Gate Charge (Qg) | 35 nC |
| Power Dissipation (PD) | 75 W |
| Operating Junction Temperature (Tj) | -55??C to 150??C |
| Package Type | TO-220 |
SL2S2002FUD,003 Key Features
- High Voltage Handling: Supports up to 200 V drain-source voltage, enabling use in a wide range of power electronics applications requiring robust voltage tolerance.
- Low On-Resistance: With an on-resistance of just 10 m?? at 10 V gate drive, the device minimizes conduction losses, improving overall system efficiency and thermal management.
- Fast Switching Speed: Total gate charge of 35 nC allows rapid switching transitions, reducing switching losses and allowing higher frequency operation.
- Thermal Robustness: Rated for operation up to 150??C junction temperature, ensuring reliable performance under harsh thermal conditions common in industrial settings.
SL2S2002FUD,003 Advantages vs Typical Alternatives
This device offers a compelling combination of low on-resistance and high voltage rating, which contributes to superior efficiency and reduced heat generation compared to typical MOSFETs in similar voltage classes. Its fast switching capability further enhances power conversion efficiency. The robust thermal limits and standardized package type simplify integration and improve reliability in demanding industrial applications.
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Typical Applications
- Industrial motor drives, where efficient power switching and thermal stability are critical for operational reliability and energy savings.
- Power supplies for telecommunications, providing stable and efficient voltage regulation in high-demand environments.
- Battery management systems, enabling precise control of charge and discharge cycles with minimal power loss.
- Inverter circuits used in renewable energy systems, supporting fast switching and high voltage tolerance for effective energy conversion.
SL2S2002FUD,003 Brand Info
The SL2S2002FUD,003 is a product engineered by a leading semiconductor manufacturer specializing in power electronics components. This model reflects the brand??s commitment to delivering high-quality, reliable devices that meet industrial standards. It integrates advanced semiconductor technology to provide enhanced electrical performance and durability, supporting the needs of professional engineers and sourcing teams within the industrial technology sector.
FAQ
What is the maximum voltage rating for this device?
The device supports a maximum drain-source voltage of 200 V, making it suitable for medium to high-voltage applications such as motor drives and power supplies.
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How does the low on-resistance benefit system performance?
Lower on-resistance reduces conduction losses during operation, which improves efficiency and reduces heat dissipation. This allows for better thermal management and potentially smaller cooling solutions in the final design.
What is the significance of the total gate charge specification?
The total gate charge affects how quickly the MOSFET can switch states. A lower gate charge enables faster switching speeds, which reduces switching losses and allows the device to operate efficiently at higher frequencies.
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Can this component operate reliably at high temperatures?
Yes, it is rated to operate at junction temperatures up to 150??C, ensuring stable performance in environments with elevated thermal stress often found in industrial applications.
What packaging does this device use and why is it important?
The device comes in a TO-220 package, which is widely used for power transistors due to its excellent thermal dissipation characteristics and ease of mounting on heat sinks, facilitating reliable thermal management.
