S29AL016J70TFI010 16Mb NOR Flash Memory – SPI Interface, SOIC-8 Package

  • Provides high-density non-volatile memory storage suitable for fast data retention in embedded systems.
  • Features a 16 Mbit capacity to support complex firmware and data logging requirements efficiently.
  • Available in a compact LFCSP package, enabling board-space savings in compact electronic designs.
  • Ideal for industrial control applications where consistent read/write performance is critical for system stability.
  • Undergoes rigorous quality testing to ensure long-term reliability in harsh operating environments.
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S29AL016J70TFI010 Overview

The S29AL016J70TFI010 is a high-performance 16 Mbit (2M x 8) CMOS Flash memory device designed for embedded applications requiring fast read access, reliable data retention, and low power consumption. Featuring a uniform 64 Kbyte sector architecture, it supports efficient in-system programming and is well-suited for code storage and data logging purposes. With a 70 ns access time and a 3.0V to 3.6V power supply, this device balances speed and power efficiency, making it ideal for a variety of embedded industrial and consumer electronics. For detailed technical support and availability, visit IC Manufacturer.

S29AL016J70TFI010 Technical Specifications

Parameter Specification
Memory Density 16 Mbit (2M x 8)
Organization 2,097,152 x 8 bits
Access Time 70 ns
Voltage Supply (Vcc) 3.0V to 3.6V
Sector Size 64 Kbytes uniform sectors
Erase Time (typical) Sector erase approx. 0.8s
Program Time (typical) Byte program approx. 25 ??s
Package Type TSOP-48
Endurance 100,000 program/erase cycles per sector
Data Retention 20 years minimum

S29AL016J70TFI010 Key Features

  • Uniform 64 Kbyte sectors: Enables flexible memory management, allowing selective sector erase and program, which reduces overall write/erase cycles and increases device longevity.
  • Fast 70 ns read access: Supports high-speed execution of code directly from Flash, which improves system responsiveness and reduces external memory bottlenecks.
  • Low-voltage operation (3.0V to 3.6V): Designed for power-sensitive embedded systems, contributing to lower power consumption without compromising performance.
  • High endurance and data retention: Supports up to 100,000 program/erase cycles per sector with a guaranteed data retention of 20 years, enhancing reliability in long-term applications.

S29AL016J70TFI010 Advantages vs Typical Alternatives

This Flash memory device offers significant advantages over typical alternatives by combining fast access times with uniform sector architecture, enabling efficient in-system reprogramming and improved data management. Its low-voltage operation reduces power consumption, while high endurance and long data retention ensure robust reliability. These features make it a superior choice for embedded systems requiring stable and high-speed non-volatile storage.

Typical Applications

  • Embedded code storage for microcontroller-based systems, where fast read speeds and in-field reprogramming are critical for firmware updates and system reliability.
  • Industrial automation equipment requiring reliable non-volatile memory for data logging and program storage under varying environmental conditions.
  • Consumer electronics such as digital cameras and set-top boxes that benefit from fast boot times and durable memory solutions.
  • Networking devices including routers and switches that demand stable firmware storage with low power consumption.

S29AL016J70TFI010 Brand Info

The S29AL016J70TFI010 is part of a family of high-quality Flash memory products designed by a leading semiconductor manufacturer specializing in non-volatile memory solutions. This product line focuses on delivering reliable, high-performance memory components optimized for embedded and industrial applications. The device is supported by comprehensive technical documentation and quality assurance processes, ensuring seamless integration and dependable operation in diverse system designs.

FAQ

What is the memory organization of this Flash device?

The device is organized as 2,097,152 words of 8 bits each, totaling 16 Mbits of storage. This configuration supports byte-level programming and uniform sector erase operations, facilitating flexible memory management in embedded applications.

What are the typical erase and program times?

The typical sector erase time is approximately 0.8 seconds, while byte programming takes around 25 microseconds. These times enable efficient in-system updates and code modifications without significantly impacting system availability

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