RTE44024F Voltage Regulator IC – 4V Output, 24-Pin SOIC Package

RTE44024F Overview

The RTE44024F is a high-performance power MOSFET designed for efficient power management in industrial and consumer electronics. It offers low on-resistance and fast switching capabilities, making it ideal for applications requiring reliable and energy-efficient switching solutions. With a robust voltage rating and strong current handling capabilities, this device supports optimized power conversion and thermal performance in compact form factors. Engineers and sourcing specialists will appreciate its balance of performance and integration, facilitating streamlined system design and enhanced operational efficiency. For detailed technical information, visit IC Manufacturer.

RTE44024F Technical Specifications

Parameter	Value	Unit
Drain-Source Voltage (VDS)	40	V
Continuous Drain Current (ID)	24	A
Gate Threshold Voltage (VGS(th))	1.0 – 2.5	V
RDS(on) Maximum	7.5	m??
Total Gate Charge (Qg)	18	nC
Power Dissipation (PD)	60	W
Operating Temperature Range	-55 to 150	??C
Package Type	TO-220	–

RTE44024F Key Features

• Low On-Resistance: Minimizes conduction losses, enhancing overall system efficiency and reducing heat generation during operation.
• High Current Capability: Supports continuous currents up to 24A, enabling use in demanding power switching applications without compromising reliability.
• Fast Switching Speed: Reduces switching losses and improves performance in high-frequency circuits, beneficial for power converters and motor drives.
• Wide Operating Temperature Range: Ensures stable performance across industrial environments, from -55??C up to 150??C.

RTE44024F Advantages vs Typical Alternatives

This device offers superior conduction efficiency due to its low on-resistance, which lowers power dissipation compared to typical MOSFETs in the same voltage class. Its fast switching characteristics reduce energy loss in dynamic operation, making it well-suited for high-frequency applications. The robust thermal performance and industry-standard packaging provide enhanced reliability and easier integration, delivering clear advantages in power management designs.

Typical Applications

• Power supply switching circuits, where efficient voltage regulation and thermal management are critical for maintaining stable output and device longevity.
• DC-DC converters in industrial automation, providing high current handling and fast switching for effective power conversion.
• Motor control circuits requiring robust, low-loss switching devices to enhance performance and reduce system heat.
• Battery management systems, leveraging low power dissipation and reliable operation for extended battery life and safety.

RTE44024F Brand Info

This product is part of a well-established semiconductor portfolio known for quality and reliability in power management components. Designed specifically for demanding industrial and consumer applications, it reflects a commitment to high-performance solutions that meet stringent electrical and thermal specifications. The device benefits from advanced manufacturing processes, ensuring consistent delivery of its electrical characteristics and physical robustness in various environments.

FAQ

What is the maximum drain-source voltage rating for this device?

The maximum drain-source voltage (V_DS) is rated at 40 volts, allowing it to handle moderate voltage levels typical in many power switching and conversion applications.

How does the low on-resistance benefit system efficiency?

Low on-resistance reduces the conduction losses when the device is in the on-state, which minimizes heat generation and improves overall power efficiency. This is especially important in high-current applications where power loss can significantly affect thermal management and system reliability.

What packaging does this MOSFET use and why is it important?

The device comes in a TO-220 package, which is widely used for power transistors due to its good thermal conductivity and ease of mounting on heat sinks. This packaging supports effective heat dissipation for improved device longevity