RTE24006F Overview
The RTE24006F is a high-performance power MOSFET designed for efficient switching applications in industrial and automotive systems. With a low on-resistance and robust voltage rating, it supports reliable operation under demanding electrical conditions. Its advanced semiconductor architecture enables fast switching speeds and enhanced thermal management, making it ideal for power conversion and motor drive circuits. Sourcing specialists and engineers benefit from its compact footprint and optimized package, which facilitate integration into space-constrained designs. For detailed product data, visit IC Manufacturer.
RTE24006F Technical Specifications
Parameter | Specification |
---|---|
Technology | N-Channel MOSFET |
Drain-Source Voltage (VDS) | 60 V |
Continuous Drain Current (ID) | 24 A |
Gate Threshold Voltage (VGS(th)) | 1.0 ?C 2.5 V |
On-Resistance (RDS(on)) | 6 m?? @ VGS = 4.5 V |
Total Gate Charge (Qg) | 14 nC |
Package | PowerSO-8 (Surface Mount) |
Operating Temperature Range | -55??C to +150??C |
RTE24006F Key Features
- Low On-Resistance: Minimizes conduction losses and improves efficiency in power management systems.
- High Current Capability: Supports up to 24 A continuous drain current, suitable for demanding load conditions.
- Fast Switching Speed: Reduces switching losses, enhancing performance in high-frequency applications.
- Compact PowerSO-8 Package: Enables dense PCB layouts and simplifies thermal dissipation.
- Wide Operating Temperature Range: Ensures reliability in harsh environmental conditions common in industrial and automotive settings.
- Optimized Gate Charge: Facilitates efficient gate drive, lowering power consumption in driver circuits.
RTE24006F Advantages vs Typical Alternatives
This device offers a superior combination of low on-resistance and high current handling compared to typical MOSFETs in the same voltage class. Its fast switching characteristics reduce power loss, which is critical for energy-sensitive industrial systems. Additionally, the robust package design enhances thermal performance and reliability, providing an edge in long-term durability over standard alternatives.
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Typical Applications
- Motor control circuits in industrial automation systems benefit from this MOSFET’s high current capability and low switching losses, enabling precise and efficient motor driving under variable loads.
- DC-DC converters utilize this component for power regulation, leveraging its fast switching and low conduction resistance to improve overall conversion efficiency.
- Battery management systems can integrate this device to handle high current flows safely, ensuring stable operation and protection of energy storage units.
- Automotive electronic modules rely on this MOSFET for robust power switching in environments requiring thermal and electrical reliability.
RTE24006F Brand Info
The RTE24006F is part of the advanced power MOSFET portfolio offered by IC Manufacturer. Engineered for industrial-grade applications, this product line emphasizes high efficiency, thermal robustness, and ease of integration. The brand is known for delivering semiconductor components that meet stringent performance and reliability standards, supporting engineers and sourcing professionals in deploying cutting-edge solutions across diverse markets.
FAQ
What is the maximum voltage rating for this MOSFET?
The maximum drain-source voltage rating is 60 volts, allowing the device to operate safely in medium-voltage switching applications typical in industrial and automotive environments.
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How does the on-resistance impact overall system efficiency?
Lower on-resistance reduces conduction losses when the MOSFET is in the ‘on’ state, which minimizes heat generation and improves energy efficiency, especially important in power conversion and motor control circuits.