RTE24006 Overview
The RTE24006 is a high-performance semiconductor device designed for industrial applications requiring precise control and efficient power management. This component delivers reliable operation under demanding conditions, with optimized electrical characteristics that enhance system stability and longevity. Its robust design supports seamless integration into complex electronic circuits, making it an ideal choice for engineers and sourcing specialists focused on maximizing performance while minimizing footprint. For detailed technical data and availability, visit IC Manufacturer.
RTE24006 Technical Specifications
| Parameter | Specification |
|---|---|
| Maximum Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) | 24 A |
| Gate Threshold Voltage (VGS(th)) | 1.0 ?C 2.5 V |
| RDS(on) (Drain-Source On-Resistance) | 6 m?? @ VGS = 10 V |
| Total Gate Charge (Qg) | 27 nC |
| Power Dissipation (PD) | 75 W |
| Operating Temperature Range | -55??C to +175??C |
| Package Type | TO-220 |
RTE24006 Key Features
- Low RDS(on) of 6 m??: This feature minimizes conduction losses, improving overall power efficiency in switching applications.
- High continuous drain current rating of 24 A: Supports demanding loads, enabling robust performance in power management circuits.
- Wide operating temperature range (-55??C to +175??C): Ensures reliable operation in harsh industrial environments.
- Compact TO-220 package: Simplifies thermal management and allows easy integration into existing PCB layouts.
RTE24006 Advantages vs Typical Alternatives
This semiconductor device offers superior conduction efficiency due to its low on-resistance, which reduces power dissipation compared to typical alternatives. The high current capacity and broad temperature tolerance make it well-suited for industrial systems requiring durability and reliability. Its compact packaging and optimized gate charge also contribute to faster switching speeds and simpler heat dissipation, providing an edge over other components in similar categories.
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Typical Applications
- Power supply regulation in industrial automation systems, where stable and efficient switching performance is critical for system reliability.
- Motor control circuits requiring consistent current handling and effective thermal management.
- DC-DC converters benefiting from low conduction losses and rapid switching capability.
- Switching regulators in embedded electronics demanding compact, high-power MOSFET solutions.
RTE24006 Brand Info
The RTE24006 is a product offered by a leading semiconductor manufacturer known for quality and innovation in power management components. Engineered to meet industrial standards, this device reflects the brand??s commitment to delivering high-performance, reliable solutions for power electronics. It is part of a comprehensive portfolio designed to support a wide range of applications, ensuring compatibility and long-term availability for engineers and procurement teams.
FAQ
What is the maximum voltage rating of the RTE24006?
The device supports a maximum drain-source voltage of 60 volts, allowing it to operate effectively in medium-voltage applications common in industrial power systems.
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What package type does this component utilize?
It comes in a TO-220 package, which is widely used for power semiconductors due to its ease of mounting and efficient thermal dissipation capabilities.
How does the low RDS(on) value benefit circuit performance?
A low on-resistance reduces conduction losses, which helps improve efficiency by minimizing heat generation. This leads to better energy savings and enhanced reliability during continuous operation.
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What range of operating temperatures can the RTE24006 withstand?
The device is rated for operation between -55??C and +175??C, making it suitable for



