RTB14005F Overview
The RTB14005F is a high-performance N-channel MOSFET designed for efficient power management in industrial and consumer electronics. Featuring low on-resistance and fast switching capabilities, this device delivers enhanced energy efficiency and thermal performance, making it ideal for applications requiring high-speed switching and low conduction losses. Its robust design supports reliable operation in demanding environments, ensuring consistent device longevity. Engineers and sourcing specialists will appreciate its compact package and compatibility with standard gate drive voltages. For more detailed information, visit IC Manufacturer.
RTB14005F Technical Specifications
| Parameter | Specification |
|---|---|
| Type | N-channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID, @ 25??C) | 140 A |
| Gate Threshold Voltage (VGS(th)) | 1.0 ?C 2.5 V |
| On-Resistance (RDS(on)) | 4.5 m?? @ VGS = 10 V |
| Total Gate Charge (Qg) | 38 nC |
| Power Dissipation (PD) | 120 W |
| Operating Junction Temperature (TJ) | -55??C to +175??C |
| Package Type | TO-220 Full Pack |
RTB14005F Key Features
- Low On-Resistance: Minimizes conduction losses to improve overall system efficiency, critical for power-sensitive applications.
- High Continuous Drain Current: Supports currents up to 140 A, allowing handling of demanding load requirements without thermal overstress.
- Fast Switching Speed: Enables efficient operation in high-frequency switching circuits, reducing switching losses and improving performance.
- Wide Operating Temperature Range: Reliable operation from -55??C to +175??C ensures suitability for harsh industrial environments.
RTB14005F Advantages vs Typical Alternatives
This MOSFET offers superior conduction efficiency with one of the lowest on-resistance ratings in its class, reducing power dissipation compared to typical alternatives. Its high current handling and thermal tolerance enable robust operation under heavy loads, while the low gate charge supports faster switching and improved energy savings. The device??s integrated package enhances thermal management and simplifies assembly, making it a preferred choice for engineers seeking reliable, high-performance power switching solutions.
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Typical Applications
- High-efficiency DC-DC converters: Ideal for power supply designs requiring fast switching and low losses to maximize energy conversion efficiency.
- Motor control circuits: Supports high current and rapid switching needed for precise motor speed and torque control.
- Battery management systems: Enables safe and efficient power handling in rechargeable battery packs with robust thermal performance.
- Switching regulators and power management modules: Enhances overall system reliability and reduces heat generation in compact power modules.
RTB14005F Brand Info
This product is manufactured by a leading semiconductor supplier renowned for its commitment to quality and innovation in power management components. The RTB14005F MOSFET reflects the brand??s expertise in delivering high-reliability devices optimized for industrial and commercial applications. Designed with stringent quality standards, it benefits from extensive testing and validation to ensure consistent performance in challenging operating conditions.
FAQ
What is the maximum voltage rating of the RTB14005F?
The device supports a maximum drain-to-source voltage of 40 V, making it suitable for medium-voltage power applications where stable switching and conduction are required.
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How does the on-resistance impact device efficiency?
Lower on-resistance reduces the voltage drop across the MOSFET during conduction, which minimizes power losses and heat generation. This leads to improved energy efficiency and allows for smaller heat sinks or cooling solutions.
What package type does the device use, and why is it important?
The RTB14005F is housed in a TO-220 Full Pack package, which offers excellent thermal dissipation and mechanical robustness. This package is widely used in power electronics for



