QE4401-44S-F0 Overview
The QE4401-44S-F0 is a precision semiconductor device designed to meet demanding industrial and consumer electronics requirements. It offers reliable performance with optimized electrical characteristics, ensuring stability in various power management and signal processing applications. Engineered for efficiency and durability, this component facilitates seamless integration into complex circuits, supporting robust operation even under varying environmental conditions. The device??s specifications reflect a balance of accuracy, power handling, and compact design, making it suitable for engineers and sourcing specialists targeting high-quality, dependable solutions. For detailed technical and sourcing information, visit IC Manufacturer.
QE4401-44S-F0 Technical Specifications
| Parameter | Specification |
|---|---|
| Device Type | Discrete Transistor |
| Package | Surface Mount 44S |
| Collector-Emitter Voltage (VCEO) | 60 V |
| Collector Current (IC) | 2 A |
| Power Dissipation (PD) | 1.5 W |
| Gain Bandwidth Product (fT) | 100 MHz |
| Transition Frequency | 100 MHz |
| Operating Temperature Range | -40??C to +125??C |
| Base-Emitter Voltage (VBE) | 0.7 V (typical) |
QE4401-44S-F0 Key Features
- High Collector Current Rating: Supports up to 2 A, enabling robust current handling for power regulation and switching applications.
- Surface Mount 44S Package: Compact footprint facilitates space-saving PCB designs and automated assembly.
- Wide Operating Temperature Range: Functionality across -40??C to +125??C ensures reliability in harsh industrial environments.
- Fast Transition Frequency: 100 MHz bandwidth supports high-speed switching and signal amplification.
- Stable Electrical Characteristics: Consistent base-emitter voltage and gain parameters improve circuit predictability and performance.
QE4401-44S-F0 Advantages vs Typical Alternatives
This device offers enhanced power dissipation and current capacity compared to typical alternatives, delivering superior reliability and efficiency in power-sensitive applications. Its robust operating temperature range and compact surface-mount packaging enable better integration and durability. The high transition frequency supports faster switching speeds, which is critical for modern electronic designs requiring precise signal control. Overall, the QE4401-44S-F0 provides a balance of performance and integration benefits that make it a reliable choice for engineers focused on quality and consistency.
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Typical Applications
- Power Management Circuits: Ideal for use in voltage regulation and switching circuits where stable current handling and thermal performance are critical for system reliability.
- Signal Amplification: Suitable for low to medium power amplification tasks in communication and control systems due to its high-frequency response.
- Industrial Control Systems: Operates reliably under variable environmental conditions, making it useful for automated machinery and sensor interface circuits.
- Consumer Electronics: Enables efficient switching and power handling in compact devices requiring surface-mount solutions.
QE4401-44S-F0 Brand Info
The QE4401-44S-F0 is produced by a leading semiconductor manufacturer known for delivering high-quality discrete components tailored for industrial and consumer electronics markets. This product aligns with the brand??s commitment to precision engineering, reliability, and innovation, supporting a wide range of electronic applications with consistent performance and advanced packaging technologies. The manufacturer supplies comprehensive datasheets and application support to assist engineers and sourcing specialists in optimizing design and procurement processes.
FAQ
What type of transistor is the QE4401-44S-F0?
The QE4401-44S-F0 is a discrete bipolar junction transistor (BJT) designed primarily for switching and amplification tasks in electronic circuits. It features typical BJT characteristics such as a base-emitter voltage around 0.7 V and a collector current rating up to 2 A.
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What are the thermal characteristics of this device?
This transistor supports power dissipation up to 1.5 watts and is rated to operate within a temperature range from -40??C to +125??C, making it suitable for



