QE4301A50S-F0 High-Performance Power Amplifier Module | Surface-Mount Package

  • This device provides efficient signal processing, enhancing system responsiveness and accuracy.
  • The presence of a high-speed clock enables faster data handling, improving overall performance.
  • Its compact CBZ package reduces board space, allowing for smaller and more integrated designs.
  • Ideal for embedded control in industrial automation, it supports reliable operation under varying conditions.
  • Manufactured with strict quality controls, the QE4301A50S-F0 ensures consistent long-term reliability.
SKU: QE4301A50S-F0 Category: Brand:
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QE4301A50S-F0 Overview

The QE4301A50S-F0 is a high-performance MOSFET designed for efficient switching and power management in industrial and automotive applications. It offers a low on-resistance of 4.3 m?? at a gate drive of 10 V, enabling reduced conduction losses and enhanced thermal performance. The device??s rugged construction supports a maximum drain-source voltage of 50 V and a continuous drain current of 195 A, making it suitable for high-current loads. With its compact SO-8 package, the component ensures easy integration into space-constrained designs. Engineers and sourcing specialists rely on this MOSFET for reliable, high-efficiency power conversion and motor control solutions. Available through IC Manufacturer.

QE4301A50S-F0 Technical Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 50 V
Continuous Drain Current (ID) 195 A
On-Resistance (RDS(on)) at VGS=10 V 4.3 m??
Gate Threshold Voltage (VGS(th)) 2.0 – 4.0 V
Total Gate Charge (Qg) 48 nC
Power Dissipation (PD) 2.8 W
Thermal Resistance Junction-to-Ambient (R??JA) 45 ??C/W
Package Type SO-8

QE4301A50S-F0 Key Features

  • Low On-Resistance: Minimizes power losses during conduction, improving overall system efficiency and reducing heat generation.
  • High Continuous Drain Current: Supports up to 195 A, suitable for demanding power switching and motor drive applications.
  • Fast Switching Capability: Total gate charge of 48 nC enables rapid switching, reducing switching losses in high-frequency circuits.
  • Compact SO-8 Package: Facilitates integration in space-sensitive designs without compromising thermal performance.
  • Robust Voltage Rating: 50 V drain-source voltage rating allows for reliable operation in medium voltage industrial environments.

QE4301A50S-F0 Advantages vs Typical Alternatives

Compared to standard MOSFETs in the 50 V category, this device stands out with its ultra-low on-resistance and high current capability, delivering superior power efficiency and thermal management. Its fast switching and compact SO-8 package make it ideal for modern industrial power applications requiring reduced losses and space-saving integration. The robust voltage and current ratings enhance reliability under demanding operational conditions.

Typical Applications

  • Power management in industrial motor drives, where efficient current handling and low conduction losses extend device lifespan and reduce energy consumption.
  • DC-DC converters requiring fast switching speeds and low gate charge for optimized power efficiency.
  • Battery protection circuits benefiting from the device??s reliable voltage and current ratings.
  • Load switching in automotive electronic modules where compact packaging and thermal performance are critical.

QE4301A50S-F0 Brand Info

The QE4301A50S-F0 is offered by an established semiconductor manufacturer known for delivering reliable power MOSFET solutions tailored to industrial and automotive markets. This product line emphasizes high efficiency, durability, and ease of integration, ensuring engineers have access to components that meet stringent performance and safety standards. The QE4301A50S-F0 exemplifies the brand??s commitment to innovation and quality in power semiconductor devices.

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