QE4301A50P-F0 Overview
The QE4301A50P-F0 is a precision high-voltage MOSFET designed for efficient power switching and control in industrial and automotive applications. With a 50 V drain-to-source voltage rating and a low on-resistance, this device ensures minimal power loss and enhanced thermal performance. Its robust construction supports high-frequency operation and reliable switching performance. Engineers and sourcing specialists will appreciate the device??s optimized balance between switching speed and power efficiency, making it suitable for compact and demanding power management systems. For more detailed product information, please visit IC Manufacturer.
QE4301A50P-F0 Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (VDS) | 50 | V |
| Continuous Drain Current (ID) | 43 | A |
| On-Resistance (RDS(on)) | 1.5 | m?? |
| Gate Threshold Voltage (VGS(th)) | 2.0 – 4.0 | V |
| Total Gate Charge (Qg) | 24 | nC |
| Operating Junction Temperature (Tj) | -55 to 150 | ??C |
| Package Type | PowerPAK SO-8 | – |
| Gate-Source Voltage (VGS) | ??20 | V |
QE4301A50P-F0 Key Features
- Low on-resistance: Minimizes conduction losses, improving overall system efficiency in power conversion applications.
- High continuous drain current capability: Supports up to 43 A, enabling robust handling of high current loads.
- Compact PowerPAK SO-8 package: Facilitates thermal dissipation while saving PCB space, ideal for dense industrial designs.
- Wide operating temperature range: Ensures reliability in harsh environments from -55??C to 150??C.
QE4301A50P-F0 Advantages vs Typical Alternatives
This device offers superior switching efficiency and thermal performance compared to typical MOSFETs with similar voltage ratings. Its low on-resistance reduces power dissipation, enhancing system reliability and extending component life. The compact PowerPAK SO-8 package improves thermal management and integration density, making it an excellent choice for space-constrained, high-performance power stages.
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Typical Applications
- DC-DC converters in industrial power management systems where efficient switching and thermal reliability are critical for sustained operation.
- Automotive battery management systems requiring robust MOSFETs capable of handling high currents and voltages.
- Motor control circuits benefiting from fast switching and low conduction losses for improved efficiency.
- Power supplies for telecommunications equipment demanding compact, reliable, and thermally efficient switching components.
QE4301A50P-F0 Brand Info
The QE4301A50P-F0 is part of a semiconductor product line developed by a leading IC Manufacturer known for delivering innovative power management solutions. This MOSFET exemplifies the brand??s commitment to combining performance, reliability, and integration ease for industrial and automotive markets. Designed to meet rigorous quality standards, it supports engineers in achieving efficient power conversion and control in complex electronic systems.
FAQ
What is the maximum voltage rating of this MOSFET?
The maximum drain-to-source voltage rating is 50 V, making it suitable for medium-voltage power switching applications in industrial and automotive environments.
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How does the on-resistance affect device performance?
Lower on-resistance reduces conduction losses during operation, which improves efficiency and reduces heat generation. This enhances overall system reliability and reduces cooling requirements.
What package type is used for this MOSFET, and why is it beneficial?
The device is housed in a compact PowerPAK SO-8 package, which offers excellent thermal