QE2R030M01 Overview
The QE2R030M01 is a high-performance power MOSFET designed for efficient power management in industrial and automotive applications. With a low on-resistance and robust thermal characteristics, this device ensures minimal conduction losses and reliable operation under demanding conditions. Its optimized design supports fast switching speeds and high current handling capabilities, making it suitable for compact, high-efficiency power conversion systems. Engineers and sourcing specialists can rely on this MOSFET for durable, low-noise performance, enhancing overall system efficiency. For detailed specifications and purchasing options, visit IC Manufacturer.
QE2R030M01 Technical Specifications
| Parameter | Value |
|---|---|
| Type | N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) | 60 A |
| Gate Threshold Voltage (VGS(th)) | 1.0 ?C 2.5 V |
| On-Resistance (RDS(on)) | 3.0 m?? @ VGS=10 V |
| Power Dissipation (PD) | 150 W |
| Operating Temperature Range | -55 ??C to +175 ??C |
| Package Type | TO-220 |
QE2R030M01 Key Features
- Low On-Resistance: Minimizes conduction losses, improving overall efficiency in power switching applications.
- High Current Capacity: Supports continuous drain currents up to 60 A, enabling robust performance in demanding loads.
- Wide Temperature Range: Operates reliably from -55 ??C to +175 ??C, suitable for harsh industrial environments.
- Fast Switching Capability: Optimized for quick transitions, reducing switching losses and enhancing system responsiveness.
QE2R030M01 Advantages vs Typical Alternatives
This MOSFET offers superior low on-resistance and higher current capacity compared to typical devices in the 30 V class. Its robust thermal rating and fast switching characteristics provide enhanced reliability and efficiency, reducing energy losses and improving system integration in industrial power applications.
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Typical Applications
- Power management circuits in industrial automation systems requiring efficient switching and high current handling.
- Motor drive controllers where fast switching and low conduction loss are critical for performance.
- DC-DC converters in embedded and automotive electronics demanding compact, efficient power solutions.
- Load switching applications needing reliable operation under broad temperature ranges.
QE2R030M01 Brand Info
The QE2R030M01 is part of IC Manufacturer??s portfolio of power MOSFETs, known for their precision engineering and durability. This product line emphasizes quality and performance, meeting stringent industrial standards and supporting advanced power electronics designs. The brand??s commitment to reliability and efficiency is reflected in this device??s robust construction and optimized electrical characteristics.
FAQ
What is the maximum continuous drain current of the QE2R030M01?
The device supports a maximum continuous drain current of 60 A, making it suitable for high-current applications such as motor drives and power converters.
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What voltage rating does the QE2R030M01 support?
This MOSFET is rated for a maximum drain-source voltage of 30 V, aligning with typical requirements for low-voltage power management systems.
How does the on-resistance impact the device??s efficiency?
With an on-resistance of just 3.0 m?? at 10 V gate drive, the device reduces conduction losses, which directly improves efficiency and reduces heat generation in power circuits.
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Is the QE2R030M01 suitable for high-temperature environments?
Yes, it operates reliably across a wide temperature range from -55 ??C to +175 ??C, making it ideal for industrial and automotive environments where thermal stress is common.
What package type is used for this MOSFET?
The device is housed in a TO-220 package, which facilitates easy mounting and effective heat dissipation for high-power applications.



