PB114006 Overview
The PB114006 is a high-performance semiconductor device designed for industrial and embedded applications requiring robust, reliable, and precise operation. Engineered to deliver consistent electrical characteristics, this component supports a wide range of voltages and currents, ensuring stable performance under varied operating conditions. Its compact package and optimized design facilitate seamless integration into complex electronic systems. Sourcing specialists and engineers will appreciate the device??s combination of durability, efficiency, and compatibility with standard manufacturing processes. For detailed specifications and purchasing options, visit IC Manufacturer.
PB114006 Technical Specifications
| Parameter | Specification |
|---|---|
| Maximum Collector-Emitter Voltage (VCEO) | 60 V |
| Continuous Collector Current (IC) | 2 A |
| Power Dissipation (Ptot) | 1.5 W |
| Gain Bandwidth Product (fT) | 100 MHz |
| Transition Frequency | 100 MHz |
| Package Type | TO-92 |
| Operating Junction Temperature (Tj) | -55??C to +150??C |
| DC Current Gain (hFE) | 100 to 300 |
PB114006 Key Features
- High Voltage Tolerance: Supports up to 60 V collector-emitter voltage, making it suitable for a wide range of medium-power applications requiring voltage stability.
- Robust Current Handling: Continuous collector current rating of 2 A ensures reliable operation under substantial load conditions without thermal stress.
- Wide Operating Temperature Range: Functions efficiently between -55??C and +150??C, enabling use in harsh industrial environments.
- Compact TO-92 Package: Facilitates easy PCB integration and efficient thermal management within limited space constraints.
- High DC Current Gain: Offers gain values from 100 to 300, improving amplification performance and circuit sensitivity.
- Efficient Power Dissipation: Maximum power dissipation of 1.5 W allows effective heat handling in normal operating conditions.
- High Frequency Response: Gain bandwidth product of 100 MHz supports fast switching and amplification in high-frequency circuits.
PB114006 Advantages vs Typical Alternatives
This device excels compared to typical alternatives by combining a high voltage rating with a substantial continuous current capacity, ensuring enhanced reliability and performance in demanding industrial setups. Its wide temperature range and compact package contribute to better integration and operational stability. These advantages make the PB114006 a superior choice for applications requiring efficient power handling and frequency response without compromising device longevity.
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Typical Applications
- Power amplification stages in industrial control systems, where stable voltage and current handling are critical for signal integrity and system reliability.
- Switching elements in embedded systems, enabling precise control of loads within compact electronic modules.
- Signal processing circuits where high gain and frequency response are necessary for accurate signal reproduction.
- General-purpose transistor use in temperature-variable environments, ensuring consistent performance across a broad thermal range.
PB114006 Brand Info
The PB114006 is a precision-engineered transistor offered by a leading IC manufacturer specializing in semiconductor components for industrial and embedded electronics. This product reflects the brand??s commitment to delivering reliable, high-quality devices optimized for performance and durability. It supports engineers and sourcing specialists in achieving efficient design integration and maintaining stringent quality standards in their production processes.
FAQ
What is the maximum voltage rating for the PB114006?
The maximum collector-emitter voltage rating is 60 V, allowing the device to operate safely in circuits with moderate voltage demands without risk of breakdown.
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What current levels can this device handle continuously?
The continuous collector current rating is 2 A, enabling the transistor to support substantial loads in power amplification and switching applications reliably.