ON5407,135 Voltage Regulator IC ?C Integrated Circuit Chip Package

  • ON5407,135 provides efficient power management for electronic devices, enhancing overall system stability.
  • Operates with a voltage rating suitable for maintaining consistent performance under varying electrical loads.
  • Compact package design reduces board space, facilitating integration into densely populated circuit layouts.
  • Ideal for embedded systems requiring reliable voltage regulation to support sensitive components.
  • Manufactured to meet standardized quality controls, ensuring dependable operation in demanding environments.
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ON5407,135 Overview

The ON5407,135 is a high-performance P-Channel MOSFET designed for efficient power switching in industrial and consumer electronics applications. This device offers a low on-resistance and high current handling capability, enabling improved thermal performance and reduced power loss. With a robust voltage rating and fast switching speed, it supports demanding environments and high-frequency circuits. Ideal for load switching, power management, and motor control, the ON5407,135 provides reliable operation with enhanced efficiency. For more detailed technical insights and procurement options, visit IC Manufacturer.

ON5407,135 Technical Specifications

Parameter Specification
Drain-Source Voltage (Vds) -30 V
Continuous Drain Current (Id) at 25??C -5.4 A
Gate Threshold Voltage (Vgs(th)) -1.0 V to -3.0 V
Drain-Source On-Resistance (Rds(on)) at Vgs = -10 V 13.5 m?? (max)
Total Gate Charge (Qg) 10 nC (typical)
Power Dissipation (Pd) 1.3 W
Operating Junction Temperature (Tj) -55??C to +150??C
Package Type SOT-23

ON5407,135 Key Features

  • Low On-Resistance: Minimizes conduction losses, enhancing overall system efficiency and reducing heat generation.
  • High Current Capability: Supports continuous drain currents up to 5.4 A, suitable for medium-power load switching applications.
  • Fast Switching Speed: Ideal for high-frequency switching circuits, ensuring minimal switching losses and improved performance.
  • Compact SOT-23 Package: Enables space-saving PCB layouts and simplifies integration into dense electronic assemblies.
  • Wide Operating Temperature Range: Reliable operation from -55??C to +150??C, suitable for harsh industrial environments.

ON5407,135 Advantages vs Typical Alternatives

This transistor features a competitive combination of low on-resistance and high current capacity, offering superior power efficiency compared to typical P-Channel MOSFETs. Its compact package and fast switching characteristics provide advantages in thermal management and system integration. These factors contribute to enhanced reliability and performance in power switching applications, making it a preferred choice over conventional discrete devices with higher losses or bulkier footprints.

Typical Applications

  • Load switching in battery-powered systems, enabling efficient power control with minimal energy loss, critical for portable and remote devices.
  • Power management circuits requiring fast switching and low conduction resistance to maintain system stability and reduce thermal stress.
  • Motor control applications where robust current handling and fast response time optimize performance and ensure smooth operation.
  • DC-DC converters and voltage regulators benefiting from compact design and efficient switching for improved power density.

ON5407,135 Brand Info

This device is part of the ON Semiconductor portfolio, known for delivering high-quality, reliable components tailored to industrial and consumer electronics markets. The ON5407,135 exemplifies the brand??s commitment to innovation, combining performance and durability in a small form factor. Designed with stringent manufacturing standards, it supports engineers and sourcing specialists seeking dependable solutions for efficient power switching and energy conservation.

FAQ

What is the maximum voltage rating for this MOSFET?

The maximum drain-source voltage rating is -30 V, which makes it suitable for a range of low to medium voltage applications, ensuring safe operation without risk of breakdown under specified conditions.

How does the on-resistance affect the MOSFET??s performance?

Lower on-resistance reduces power dissipation during conduction, improving energy efficiency and reducing heat generated in the device. This leads to better thermal management and longer component lifespan in power switching circuits.

What package type is used for this transistor?

The device is housed in a compact SOT-23 package, which supports space-efficient PCB layouts and is widely used in surface-mount technology for automated assembly processes.

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Can this MOSFET operate in high-temperature environments?

Yes, it supports an operating junction temperature range from -55??C to +150??C, making it suitable for industrial applications where environmental conditions can be demanding.

What applications are best suited for this P-Channel MOSFET?

This transistor is best suited for load switching, power management, motor control, and DC-DC converter circuits where efficient switching, reliable current handling, and compact size are critical.

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