NTP52101G0JTZ Overview
The NTP52101G0JTZ is a high-performance N-channel logic-level enhancement-mode MOSFET designed for efficient power switching in a wide range of industrial and consumer applications. Featuring a low on-resistance and fast switching capability, this device offers excellent energy efficiency and thermal management. It supports a maximum drain-to-source voltage of 30V with a continuous drain current rating suitable for demanding loads. The compact package and robust electrical characteristics make it ideal for space-constrained designs requiring reliable, low-loss power control. Available from IC Manufacturer, it aligns well with modern power management solutions.
NTP52101G0JTZ Technical Specifications
| Parameter | Specification |
|---|---|
| Device Type | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) | 5.6 A (at 25??C) |
| Gate Threshold Voltage (VGS(th)) | 1.0 ?C 2.5 V |
| RDS(on) (Max) at VGS = 4.5V | 13 m?? |
| Total Gate Charge (Qg) | 8.4 nC (typical) |
| Package | SOT-23 |
| Operating Junction Temperature | -55??C to +150??C |
| Input Capacitance (Ciss) | 180 pF (typical) |
NTP52101G0JTZ Key Features
- Low On-Resistance: Minimizes conduction losses, improving energy efficiency in power switching applications.
- Logic-Level Drive Capability: Compatible with low-voltage gate drive signals, enabling easy interfacing with microcontrollers and logic circuits.
- Fast Switching Speed: Reduces switching losses and electromagnetic interference, enhancing overall system performance.
- Compact SOT-23 Package: Ideal for space-constrained PCB layouts, allowing high-density device integration.
- Wide Operating Temperature Range: Ensures reliable operation in harsh industrial environments.
NTP52101G0JTZ Advantages vs Typical Alternatives
This device offers a competitive advantage with its low RDS(on) value and logic-level gate drive, enabling lower power dissipation and simpler drive circuitry compared to traditional MOSFETs. Its compact SOT-23 package supports miniaturized designs without sacrificing thermal performance. Additionally, the fast switching capability reduces losses during high-frequency operation, making it a superior choice for efficient power management in industrial and consumer electronics.
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Typical Applications
- Load switching in battery-powered systems, providing efficient power control with minimal voltage drop and heat generation.
- DC-DC converters requiring fast switching transistors with low gate charge for improved efficiency.
- General-purpose switching in industrial control circuits and motor driver stages.
- Power management in portable devices where compact size and low gate drive voltage are essential.
NTP52101G0JTZ Brand Info
Manufactured by a leading semiconductor supplier, this MOSFET integrates advanced silicon technology to deliver reliable performance tailored to modern power switching needs. The product benefits from stringent quality control and proven manufacturing processes, ensuring consistency and durability in demanding applications. This device exemplifies the brand??s commitment to providing cost-effective, high-efficiency components suited for industrial and consumer electronics markets.
FAQ
What is the maximum drain-to-source voltage rating of this MOSFET?
The maximum drain-to-source voltage rating is 30 volts, which defines the highest voltage the device can withstand without breakdown, suitable for low to medium voltage power switching applications.
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Can this MOSFET be driven directly by a microcontroller?
Yes, it supports logic-level gate drive with a threshold voltage between 1.0 and 2.5 volts, allowing direct interfacing with typical microcontroller GPIO pins operating at 3.3V or 5V logic levels.
What are the benefits of the SOT-23 package for this device?
The SOT-23 package offers a compact footprint that saves PCB space, making it ideal for high-density designs. It also provides adequate thermal performance for the device??s power dissipation levels in typical operating conditions.
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How does the low RDS(on) value improve efficiency?
Lower RDS(on) reduces the conduction losses when the MOSFET is on, minimizing heat generation and improving overall energy efficiency, which is crucial for power-sensitive applications.
What temperature range can this MOSFET reliably operate within?
The device is rated for an operating junction temperature from -55??C up to +150??C, ensuring stable performance in a wide variety of environmental conditions, including harsh industrial settings.
